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A broadband tunable terahertz wave absorber and a manufacturing method thereof

A production method and terahertz technology, applied in the terahertz field, can solve problems such as limited bandwidth and large volume, and achieve the effect of realizing tunable characteristics

Active Publication Date: 2018-12-21
XIAN UNIV OF TECH
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a broadband tunable terahertz wave absorber, which solves the problems of large volume and limited bandwidth of terahertz wave devices in the prior art

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  • A broadband tunable terahertz wave absorber and a manufacturing method thereof
  • A broadband tunable terahertz wave absorber and a manufacturing method thereof
  • A broadband tunable terahertz wave absorber and a manufacturing method thereof

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Embodiment Construction

[0030] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0031] A broadband tunable terahertz wave absorber of the present invention, the structure of which is shown in Figure 1(a), Figure 1(b) and figure 2 As shown, a doped semiconductor material matrix 1 is included, and a layer of microstructure array is formed on the surface of the doped semiconductor material matrix 1. The microstructure array includes a number of uniformly arranged microstructure units 2, and the microstructure unit 2 can respond to THz waves. A rectangular waveguide structure 3 is also designed in the structural unit 2 to increase the absorption bandwidth.

[0032] The doped semiconductor material substrate 1 is a p-type silicon material, and the doping concentration is ~0.3×10 17 / cm 3 , the thickness of the semiconductor material matrix is ​​250-300 μ mm, and the resistivity is 0.5 Ω·cm.

[0033] The microstructure unit...

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Abstract

The invention discloses broadband tunable terahertz wave absorber which comprise a doped semiconductor material substrate, A lay of microstructure array is fabricated on that surface of the substrateof the dope semiconductor material, the microstructure array comprises a plurality of uniformly arranged microstructure units, the microstructure unit is capable of responding to THz waves, A rectangular waveguide structure is also designed in the microstructure unit to increase the absorption bandwidth, A substrate of that dope semiconductor material is a p-type silicon material, the doping concentration is -0.3 *1017 / cm<3>, A substrate thickness of that semiconductor material is 250 to 300 [mu]mm, the resistivity is 0.5 omega.cm, the microstructure unit is H-type microstructure unit, Each H-type microstructure unit is symmetrical with respect to the geometrical center, and the thickness of the H-type microstructure unit is 53 [mu]m. The invention also discloses a manufacturing method ofa broadband tunable terahertz wave absorber. The invention solves the problems that the terahertz wave device in the prior art is large in volume and limited in bandwidth.

Description

technical field [0001] The invention belongs to the technical field of terahertz, and in particular relates to a broadband tunable terahertz wave absorber, and also relates to a manufacturing method of a broadband tunable terahertz wave absorber. Background technique [0002] Terahertz (THz) waves, electromagnetic waves with a frequency between 0.1THz and 10THz between radio frequency and light waves, are widely used in materials, physics and photonics because of their important application value in non-contact imaging, wireless communication, and spectral sensing. extensive attention of researchers in the field. [0003] However, the current terahertz wave devices are generally large in size, and the lack of functional devices such as miniaturized terahertz absorbers and modulators limits the application of THz technology. Metamaterials that can respond naturally to THz waves have attracted extensive attention from academia and industry. Metamaterials using traditional me...

Claims

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Application Information

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IPC IPC(8): H01Q17/00G02B5/00B81C1/00
CPCB81C1/00214B81C1/00531G02B5/003H01Q17/007
Inventor 王玥陈素果
Owner XIAN UNIV OF TECH
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