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A method for induce formation of 2DHG in gallium nitride by fluorine ion implantation

A technology of gallium nitride and fluorine ions, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of low ionization efficiency, achieve high doping uniformity, low cost, and simple preparation process

Inactive Publication Date: 2018-12-21
JIANGNAN UNIV
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Problems solved by technology

However, the ionization efficiency after ion implantation into the Mg acceptor is still low, as is the case with in situ growth doping.

Method used

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  • A method for induce formation of 2DHG in gallium nitride by fluorine ion implantation
  • A method for induce formation of 2DHG in gallium nitride by fluorine ion implantation
  • A method for induce formation of 2DHG in gallium nitride by fluorine ion implantation

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Embodiment 1

[0025] see figure 1 , a device structure that induces the formation of 2DHG in GaN realized by fluorine ion implantation. First, a substrate 11 is provided. The substrate 11 can be a silicon (silicon, Si) substrate, a sapphire substrate or other unintentionally doped nitride A gallium (gallium nitride, GaN) bulk substrate, in this embodiment, a gallium nitride bulk substrate is used. On the substrate 11 is an n-type GaN semiconductor layer 12 grown by MOCVD epitaxial technology, and then ion source 14 is directly implanted into a selected region of the n-type GaN semiconductor layer 12 by ion implantation technology at room temperature. Use the NV-GSD-HE model ion implanter to directly implant the ion source into the GaN surface, and the implanted ion source 14 is F + , the energy is 10keV, and the implant dose is 2×10 13 cm -2 , the injection angle is plus 7°. After the ion source 14 stops moving in the n-type GaN semiconductor layer 12, it absorbs electrons and becomes a...

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Abstract

The invention discloses a method for inducing high-concentration movable holes in GaN material by using a fluorine ion implantation method, a hole quantum well and a two-dimensional hole gas (2DHG) are formed, the high efficiency p-type doping of GaN material is realized, Unlike the traditional p-doping principle, This method is mainly realized by adjusting the relative position between the valence band of F + and Fermi level, The device structure comprises a substrate, an n-type gallium nitride semiconductor layer (containing fluorine ion implantation) on a substrate, A metal electrode is arrange on that n-type gallium nitride semiconductor layer. The invention utilize F + with strong electronegativity of ion implantation to induce high-concentration 2DHG in the gallium nitride to providemovable holes, which is compatible with the prior silicon technology, and the concentration and depth of the implanted fluorine ion can be precisely regulated, and the preparation process is simple and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for inducing and generating two-dimensional hole gas in gallium nitride, a wide bandgap semiconductor material, by ion implantation of fluorine. Background technique [0002] P-type GaN and AlGaN epitaxial materials with high electrical conductivity are very important for various electronic and optoelectronic devices, but the activation efficiency of impurities is greatly reduced due to the formation of deep energy levels in GaN epitaxial materials by Mg impurities, and in the case of heavy doping The mobility of holes is also greatly reduced under these conditions, so that the conductivity of p-type GaN materials has not been effectively improved, and in AlGaN epitaxial materials with higher band gaps, the conductivity of p-type materials is even lower. up. Despite the above difficulties, p-type GaN and AlGaN materials have been applied in optoelectr...

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Application Information

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IPC IPC(8): H01L21/265
CPCH01L21/26546H01L21/26586
Inventor 闫大为羊群思赵琳娜陈雷雷顾晓峰
Owner JIANGNAN UNIV
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