Method for improving doping uniformity of semiconductor laser

Abstract

The invention discloses a method for improving the doping uniformity of a semiconductor laser, and the method comprises the steps: placing a substrate on a pedestal of epitaxial growth equipment, and enabling the edge, facing the surface of the pedestal, of the substrate not to be in contact with the surface, facing the substrate, of the pedestal; sequentially growing an n-type epitaxial layer, an active layer and a p-type epitaxial layer on the surface, deviating from a base, of a substrate, introducing a growth condition sensitive doping source required for growing the p-type epitaxial layer from two or three gas paths of epitaxial growth equipment, and vertically arranging the two or three gas paths. By implementing the invention, the contact between the substrate and the base is changed, so that the contact between the edge of the substrate and the edge of the base becomes poor, the temperature uniformity of the surface of the substrate can be effectively adjusted, and the influence of the temperature on the non-uniform doping of the doping source can be reduced; moreover, two or three paths of doping sources sensitive to the growth condition are simultaneously introduced, so that the doping uniformity of the doping sources sensitive to the growth condition can be improved on the basis of reducing the influence of the temperature on the doping uniformity of the doping sources sensitive to the growth condition.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the doping uniformity of semiconductor lasers. Background technique [0002] Semiconductor laser is an important optoelectronic device, which has a wide range of applications in sensing, lighting, communication, pumping and other fields. In order to reduce the manufacturing cost of semiconductor lasers, three-inch, four-inch and even six-inch gallium arsenide substrates are gradually used in the epitaxy process. At present, planetary reaction chambers are often used to grow epitaxial wafers for semiconductor lasers, and a combination of substrate rotation and graphite disk revolution is used to achieve uniform growth of epitaxial layers on the entire substrate surface. By adopting the above solution, the standard deviation of the thickness of the epitaxial layer over the entire epitaxial layer can be less than 0.5%. [0003] However, when the epita...

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a method for improving the doping uniformity of a semiconductor laser to solve the technical problem in the prior art that the doping concentration uniformity of the doping source on the epitaxial layer cannot meet the required requirements

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