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Preparation method of zinc indium sulfide nanosheet array film

A zinc-indium-sulfur nano- and nano-film technology, which is applied in coatings and other directions, can solve the problems of inability to carry out large-scale production, poor shape controllability, and difficult recycling, and achieve the effects of less defects, easy recycling, and low cost

Active Publication Date: 2018-12-21
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of these synthesized nanomaterials are powder samples, which are difficult to recycle, and ZnIn is directly synthesized on a conductive substrate. 2 S 4 Nanomaterials are still a huge challenge; on the other hand, these materials are basically one-dimensional nanomaterials, two-dimensional ZnIn 2 S 4 The potential of nanomaterials (such as nanosheets, nanobelts, etc.) in photocatalysis is still huge
However, Peng et al. directly synthesized ZnIn in one step by activating the FTO substrate. 2 S 4 The method of nanosheet array has the problems of high cost, complicated process and relatively dangerous (aqua regia is required), and the prepared ZnIn 2 S 4 Poor shape controllability, unable to be mass-produced

Method used

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  • Preparation method of zinc indium sulfide nanosheet array film
  • Preparation method of zinc indium sulfide nanosheet array film

Examples

Experimental program
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Effect test

Embodiment 1

[0025] A ZnIn 2 S 4 A method for preparing a nanosheet array film, comprising the following steps:

[0026] (1) Deposit a layer of 1 μm In on the surface of clean FTO conductive glass by chemical method 2 S 3 Nano film, and 100nm zinc is sputtered on its surface.

[0027] (2) Mix thioacetamide and indium chloride into the reaction kettle according to the molar ratio of 4:1, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to prepare the indium salt concentration of 0.2M homogeneous solution;

[0028] (3) Put the substrate and the prepared precursor into the reactor and seal it, control the temperature at 180°C, and the reaction time is 2 hours; after the reaction, the reactor is naturally cooled to room temperature, and the sample is taken out and washed and dried to obtain the Uniform growth of ZnIn on the substrate 2 S 4 Nanosheet array films.

[0029] figure 1 For the ZnIn that this embodiment obtains 2 S 4 SEM image of the film; by fi...

Embodiment 2

[0032] A ZnIn 2 S 4 A method for preparing a nanosheet array film, comprising the following steps:

[0033] (1) Deposit a layer of 1 μm In on the surface of clean FTO conductive glass by chemical method 2 S 3 Nano film, and 200nm zinc is sputtered on its surface.

[0034] (2) Mix thiourea and indium chloride into the reaction kettle according to the molar ratio of 4:1, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to form a uniform solution with an indium salt concentration of 0.3M ;

[0035] (3) Put the substrate and the prepared precursor into the reactor and seal it, control the temperature at 180°C, and the reaction time is 4 hours; after the reaction, the reactor is naturally cooled to room temperature, and the samples are taken out and washed and dried to obtain the Uniform growth of ZnIn on the substrate 2 S 4 Nanosheet array films.

Embodiment 3

[0037] A ZnIn 2 S 4 A method for preparing a nanosheet array film, comprising the following steps:

[0038] (1) Deposit a layer of 1 μm In on the surface of clean FTO conductive glass by chemical method 2 S 3 Nano film, and 50nm zinc is sputtered on its surface.

[0039] (2) Mix cysteine ​​and indium nitrate into the reaction kettle according to the molar ratio of 4:1, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to prepare a uniform indium salt concentration of 0.1M solution;

[0040] (3) Put the substrate and prepared precursor into the reactor and seal it, control the temperature at 200°C, and react for 1 hour; after the reaction, the reactor is naturally cooled to room temperature, and the sample is taken out and washed and dried to obtain the Uniform growth of ZnIn on the substrate 2 S 4 Nanosheet array films.

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Abstract

The invention discloses a preparation method of a ZnIn2S4 nanosheet array film. The method comprises the following steps: firstly, depositing a layer of In2S3 nano film on FTO conductive glass by utilizing a chemical method; then sputtering a layer of zinc on the surface; finally, taking an indium source and a sulfide source as precursors, and controlling the heat reaction temperature and time ofa solvent to obtain a ZnIn2S4 nanosheet array. The prepared ZnIn2S4 nanosheet is of an ultrathin structure and is 5-6nm in thickness; the ZnIn2S4 nanosheet has high crystallizing performance, high trapping performance, recyclable performance and other outstanding properties; in addition, the method is simple in preparation; the process is easily controlled; the cost is low; the method is nontoxicand environmentally friendly and has huge application prospects in the fields such as the fields of photocatalytic hydrogen generation, organic pollutant photocatalytic degradation and artificial photosynthesis.

Description

technical field [0001] The invention belongs to the field of nano film material preparation and photocatalysis application, and in particular relates to a preparation method of zinc indium sulfur nano sheet array film. Background technique [0002] With the rapid economic development of various countries in the world, the human demand for energy is getting higher and higher, and the voice for environmental protection is also increasing. However, the traditional fossil energy is a non-renewable energy, facing the trend of depletion, and the combustion of fossil energy produces CO 2 , SO 2 and other harmful gases have great damage to the environment. Therefore, solving the energy crisis and environmental pollution has become two major issues facing the world today. All countries in the world regard the establishment of a new energy system with green environmental protection and sustainable development as a major national development strategy. Semiconductor photocatalysis te...

Claims

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Application Information

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IPC IPC(8): C03C17/34
CPCC03C17/006C03C17/347C03C2217/40C03C2217/71C03C2217/94C03C2218/111
Inventor 何丹农卢静涂兴龙白仕亨李砚瑞金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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