Preparation method of zinc indium sulfide nanosheet array film
A zinc-indium-sulfur nano- and nano-film technology, which is applied in coatings and other directions, can solve the problems of inability to carry out large-scale production, poor shape controllability, and difficult recycling, and achieve the effects of less defects, easy recycling, and low cost
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Embodiment 1
[0025] A ZnIn 2 S 4 A method for preparing a nanosheet array film, comprising the following steps:
[0026] (1) Deposit a layer of 1 μm In on the surface of clean FTO conductive glass by chemical method 2 S 3 Nano film, and 100nm zinc is sputtered on its surface.
[0027] (2) Mix thioacetamide and indium chloride into the reaction kettle according to the molar ratio of 4:1, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to prepare the indium salt concentration of 0.2M homogeneous solution;
[0028] (3) Put the substrate and the prepared precursor into the reactor and seal it, control the temperature at 180°C, and the reaction time is 2 hours; after the reaction, the reactor is naturally cooled to room temperature, and the sample is taken out and washed and dried to obtain the Uniform growth of ZnIn on the substrate 2 S 4 Nanosheet array films.
[0029] figure 1 For the ZnIn that this embodiment obtains 2 S 4 SEM image of the film; by fi...
Embodiment 2
[0032] A ZnIn 2 S 4 A method for preparing a nanosheet array film, comprising the following steps:
[0033] (1) Deposit a layer of 1 μm In on the surface of clean FTO conductive glass by chemical method 2 S 3 Nano film, and 200nm zinc is sputtered on its surface.
[0034] (2) Mix thiourea and indium chloride into the reaction kettle according to the molar ratio of 4:1, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to form a uniform solution with an indium salt concentration of 0.3M ;
[0035] (3) Put the substrate and the prepared precursor into the reactor and seal it, control the temperature at 180°C, and the reaction time is 4 hours; after the reaction, the reactor is naturally cooled to room temperature, and the samples are taken out and washed and dried to obtain the Uniform growth of ZnIn on the substrate 2 S 4 Nanosheet array films.
Embodiment 3
[0037] A ZnIn 2 S 4 A method for preparing a nanosheet array film, comprising the following steps:
[0038] (1) Deposit a layer of 1 μm In on the surface of clean FTO conductive glass by chemical method 2 S 3 Nano film, and 50nm zinc is sputtered on its surface.
[0039] (2) Mix cysteine and indium nitrate into the reaction kettle according to the molar ratio of 4:1, then add 40 ml of ethylene glycol, and then stir or ultrasonically dissolve to prepare a uniform indium salt concentration of 0.1M solution;
[0040] (3) Put the substrate and prepared precursor into the reactor and seal it, control the temperature at 200°C, and react for 1 hour; after the reaction, the reactor is naturally cooled to room temperature, and the sample is taken out and washed and dried to obtain the Uniform growth of ZnIn on the substrate 2 S 4 Nanosheet array films.
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