Preparation method of three-dimensional graphene with controllable distribution

A graphene, three-dimensional technology, applied in the field of preparation of three-dimensional graphene, can solve the problem of disordered and uncontrollable distribution of graphene, and achieve the effects of quick contact, simple preparation process and low cost

Inactive Publication Date: 2018-12-18
SHANXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of chaotic and uncontrollable graphene distribution in the existing three-dimensional graphene synthesis, the present invention provides a preparation method based on silicon grass to control the distribution of three-dimensional graphene

Method used

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  • Preparation method of three-dimensional graphene with controllable distribution
  • Preparation method of three-dimensional graphene with controllable distribution
  • Preparation method of three-dimensional graphene with controllable distribution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Clean silicon wafers step by step with deionized water, ethanol (99.5%), and acetone (99.9%). After drying, put it into the inductively coupled plasma multiplex system, first turn on the power supply of the coil, and adjust the power of the coil to 450 W; Sulfur gas, the flow rate is 143sccm, the gas is turned off after 9s, and octafluorocyclobutane and sulfur hexafluoride are alternately fed 3 times in this order, and the passivation and etching processes are alternately performed to obtain silicon grass. Use deionized water, ethanol (99.5%), and acetone (99.9%) to clean the silicon grass step by step. After drying, put it into the center of the heating area of ​​the tubular plasma enhanced chemical vapor deposition equipment; adjust the distance between the RF power supply coil and the heating area to be 8cm, close the degassing valve and then vacuumize it, when the vacuum degree reaches less than 0.02 Torr, open Heat the power supply in the heating area to 900°C; fe...

Embodiment 2

[0028] Clean silicon wafers step by step with deionized water, ethanol (99.5%), and acetone (99.9%). After drying, put it into the inductively coupled plasma multiplex system, first turn on the coil power supply, and adjust the coil power to 600 W; then pass through octafluorocyclobutane gas with a flow rate of 1 sccm, turn off the gas after 20s, and then pass through sulfur hexafluoride The gas flow rate is 1 sccm, and the gas is turned off after 20s. According to this sequence, octafluorocyclobutane and sulfur hexafluoride are alternately fed 3 times, and the passivation and etching processes are alternately performed to obtain silicon grass. Use deionized water, ethanol (99.5%), and acetone (99.9%) to clean the silicon grass step by step. After drying, put it into the center of the heating area of ​​the tubular plasma-enhanced chemical vapor deposition equipment; adjust the distance between the RF power supply coil and the heating area to 1cm, close the degassing valve and ...

Embodiment 3

[0030] Clean silicon wafers step by step with deionized water, ethanol (99.5%), and acetone (99.9%). After drying, put it into the inductively coupled plasma multiplex system, first turn on the power supply of the coil, and adjust the coil power to 300 W; then pass in octafluorocyclobutane gas with a flow rate of 130 sccm, turn off the gas after 5s, and then pass in sulfur hexafluoride The gas flow rate is 180 sccm, and the gas is turned off after 5s. According to this sequence, octafluorocyclobutane and sulfur hexafluoride are alternately fed 3 times, and the passivation and etching processes are alternately performed to obtain silicon grass. Use deionized water, ethanol (99.5%), and acetone (99.9%) to clean the silicon grass step by step. After drying, put it into the center of the heating area of ​​the tubular plasma-enhanced chemical vapor deposition equipment; adjust the distance between the RF power supply coil and the heating area to 50cm, close the degassing valve and ...

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Abstract

A preparation method of three-dimensional graphene with controllable distribution belongs to the technical field of graphene preparation and solves the problems that graphene is disorder and uncontrollable in distribution during synthesis of three-dimensional graphene in the prior art. In the invention, a silicon wafer is alternatively subjected to passivation and etching processes in an inductively-coupled plasma multiple system through a circulating deep reactive ion etching process without addition of oxygen, thus forming silicon grass; then the three-dimensional graphene grows on the silicon grass being a substrate in a tubular plasma enhanced chemical vapor deposition device.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, and in particular relates to a method for preparing three-dimensional graphene with controllable distribution. Background technique [0002] 3D graphene has a high specific surface area, high electrical conductivity, and a unique three-dimensional structure that allows charged particles to come into contact quickly in practical applications. Therefore, it is widely used in the field of energy storage, such as transparent electrodes, supercapacitors, lithium-ion batteries, solar cells, etc. At the current stage, copper foil, nickel foil, quartz wafer, silicon wafer and other common metals or non-metals are mainly used to grow three-dimensional graphene through plasma-enhanced chemical vapor deposition equipment. However, the distribution of three-dimensional graphene synthesized by this method is chaotic and uncontrollable, which greatly limits the application of three-dimensional gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 马一飞王梅韩杰敏陈旭远汪丽蓉肖连团贾锁堂
Owner SHANXI UNIV
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