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A method for preparing group II-VI semiconductor films on flexible substrate

A II-VI, flexible substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, climate sustainability, etc., can solve the problems of high production cost, high deposition temperature, complex process, etc., and achieve high flatness, good The effect of photoelectric performance and simple process

Active Publication Date: 2018-12-14
HEFEI UNIV OF TECH
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Problems solved by technology

These methods have their own disadvantages, such as complex process, high production cost and high deposition temperature, etc.

Method used

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Embodiment Construction

[0018] The technical scheme of the present invention is further described below in conjunction with specific examples:

[0019] A method for preparing a II-VI group semiconductor thin film on a flexible substrate, comprising the following steps:

[0020] (1) Preparation of flexible substrate PET: Cut 6×8cm PET with a thickness of 50 μm, place it on a heating table, bake at 90°C for 5 minutes until the PET is flat, and then wash it in acetone, ethanol and deionized water respectively. Ultrasonic cleaning for 5 minutes, drying and cleaning in a plasma cleaner for 15 minutes;

[0021] (2) Evaporation of group II-VI semiconductors: use electron beam evaporation coating to evaporate group II-VI compound semiconductors on the PET surface, the evaporation rate is 0.5 Å / s, and the film thickness is 100nm to obtain group II-VI semiconductor thin films / PET;

[0022] (3) Construction of II-VI semiconductor photodetectors: fix the strip mask on the prepared flexible substrate PET and v...

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Abstract

The invention discloses a method for preparing group II-VI semiconductor films on a flexible substrate, high-quality group II-VI semiconductor films are prepared on the flexible substrate, and still have good photoelectric performance after a certain degree of bending and certain bending times. An electron beam evaporation coating method can ensure that deposition of a target material on the substrate is performed at a relatively lower temperature, so that the problems of incapability of resisting high temperature and poor dimensional stability of flexible substrate PET are electively solved.By use of the electron beam evaporation method, high-quality II-VI semiconductor films can be obtained on the flexible substrate PET, and a built group II-VI semiconductor photodetector has good photoelectric performance. The method for preparing the group II-IV semiconductor film on the flexible substrate provided by the invention is simple in technology and low in cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a method for preparing II-VI group semiconductor films on a flexible substrate. Background technique [0002] With the development of wearable technology, people's demand for flexible optoelectronic devices has become more and more urgent, especially in the fields of medical and safety applications, so flexible optoelectronic devices have also received more and more attention. The bandgap of group II-VI semiconductors covers the spectral range from far infrared to ultraviolet, and most of these materials can achieve direct bandgap. Through energy band engineering, almost any specified energy gap value can be achieved, and they have excellent optics and electronics. nature. These characteristics make II-VI semiconductor thin films have very good application prospects in flexible optoelectronic devices. [0003] However, most of the existing II-VI semi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02422H01L21/02551H01L21/02631H01L31/1836Y02P70/50
Inventor 王敏贾良鹏徐志勇杨金华
Owner HEFEI UNIV OF TECH
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