InGaN quantum dot LED epitaxial structure with strain reduction structure

Abstract

The invention provides an InGaN quantum dot LED epitaxial structure with a strain reduction structure, which comprises a sapphire substrate layer, a GaN low-temperature nucleation layer, a U-GaN layer, an N-GaN layer, a first InGaN strain reduction layer, an InGaN quantum dot active region, an electron blocking layer and a P-GaN layer, wherein the first InGaN strain reduction layer is an InGaN monolayer or InGaN / GaN superlattice whose In component is lower than 10%. The InGaNInGaN strain reduction layer is introduced in the InGaN quantum dot LED epitaxial structure. The InGaN quantum dot LED epitaxial structure with the strain reduction structure in the invention brings about the following effects: (1) weakening the quantum-confined stark effect; (2) reducing the defect density of the InGaN quantum dot active region; (3) making up for the shortcomings of insufficient quantum dot density.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials, in particular to an InGaN quantum dot LED epitaxial structure with a strain reduction structure. Background technique [0002] GaN-based LEDs are known as the fourth-generation lighting sources. They have the advantages of low energy consumption, long life, small size, and high brightness. They have gradually replaced traditional incandescent and fluorescent lamps and become the mainstream light source in the lighting market. [0003] The existing GaN-based LEDs on the market are all quantum well LEDs, represented by blue-green LEDs, whose light-emitting layer is generally an InGaN / GaN multi-quantum well active region. Although it has achieved great success, there are essential shortcomings in InGaN / GaN multiple quantum wells, which cannot be completely overcome by technical means. First, due to the lattice mismatch between InGaN and GaN, and the high density of threading di...

AI Technical Summary

Problems solved by technology

LEDs prepared with GaN-based nanorods as epitaxial materials are called 3D LEDs. The preparation process of GaN-based nanorods is relatively complicated, and the preparation cost is high, and the preparation process of 3D LED chips is immature, so it cannot be applied to actual production.

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