Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cathode interface modification material, and solar cell as well as preparation method and application thereof

A solar cell and cathode interface technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low efficiency and low carrier mobility, achieve low cost, improve luminous efficiency, and reduce work function.

Inactive Publication Date: 2018-11-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the carrier mobility of organic semiconductor materials is usually very low, there will be a large loss of carriers separated on the interface during the movement to the electrode, so the efficiency is often not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cathode interface modification material, and solar cell as well as preparation method and application thereof
  • Cathode interface modification material, and solar cell as well as preparation method and application thereof
  • Cathode interface modification material, and solar cell as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] 1. ITO glass cleaning. Use glass cleaning solution, deionized water, acetone, absolute ethanol, and isopropanol for ultrasonic cleaning for 30 minutes. Blow dry the surface with nitrogen and carry out plasma surface treatment to make the surface cleaner and enhance wettability.

[0076] 2. Preparation of hole transport layer. PEDOT:PSS was spin-coated on the surface of ITO glass at a spin-coating speed of 3500 rpm for 60 seconds. After spin-coating, it was thermally annealed at 100°C for 30 minutes on a heating table.

[0077] 3. Film preparation of light-absorbing active layer. PTB7:PCBM was weighed according to a mass ratio of 1:4, and chlorobenzene was used as an organic solvent to prepare a light-absorbing active layer precursor solution. The precursor solution was spin-coated on the hole transport layer at a rotation speed of 600 rpm, and the spin-coating time was 1 min.

[0078] 4. Preparation of cathode interface modification layer. The PFN material was diss...

Embodiment 2

[0086] 1. ITO glass cleaning. Use glass cleaning solution, deionized water, acetone, absolute ethanol, and isopropanol for ultrasonic cleaning for 30 minutes. Blow dry the surface with nitrogen and carry out plasma surface treatment to make the surface cleaner and enhance wettability.

[0087] 2. Preparation of hole transport layer. PEDOT:PSS was spin-coated on the surface of ITO glass at a spin-coating speed of 3500 rpm for 60 seconds. After spin-coating, it was thermally annealed at 100°C for 30 minutes on a heating table.

[0088] 3. Film preparation of light-absorbing active layer. PTB7:PCBM was weighed according to the mass ratio of 1:4, and chlorobenzene was used as an organic solvent to prepare a light-absorbing active layer precursor solution, and the precursor solution was spin-coated on the hole transport layer at a rotation speed of 600 rpm. The spin coating time was 1 minute.

[0089] 4. Preparation of cathode interface modification layer. Dissolve 5 mg / ml PFN...

Embodiment 3

[0092] 1. ITO cleaning. Ultrasonic cleaning was performed for 30 minutes with glass cleaning solution, deionized water, acetone, absolute ethanol, and isopropanol successively. Blow dry the surface with nitrogen and carry out plasma surface treatment to make the surface cleaner and enhance wettability.

[0093] 2. Preparation of MoO 3 Floor. Put the glass sheet into the vacuum evaporation apparatus, and vacuumize to 3*10 -4 Pa, then in MoO was prepared at an evaporation rate of 3 layer with a thickness of 8 nm.

[0094]3. Spin-coat the photoactive layer. PTB7:PCBM was weighed according to a mass ratio of 1:4, and chlorobenzene was used as an organic solvent to prepare a light-absorbing active layer precursor solution. The precursor solution was spin-coated on the hole transport layer at a rotation speed of 600 rpm, and the spin-coating time was 1 min.

[0095] 4. Preparation of cathode interface modification layer. Dissolve 10mg / ml PFN-Br material in a highly polar s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Effective areaaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cathode interface modification material, and a solar cell as well as a preparation method and application thereof. The cathode interface modification material is prepared from poly [9,9-bis(3'-(N,N-dimethylamino) propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) and / or derivatives of the PFN. The organic thin film solar cell comprises a top electrode layer, a cathode interface modification layer, a light absorption active layer, a hole transport layer and a bottom electrode which are sequentially arranged in the set direction, wherein the cathode interface modification layer is prepared from the cathode interface modification material. The cathode interface modification material provided by the invention adopts the PFN with a permanent electric dipole moment to modify the interface of a cathode of the organic thin film solar cell, namely, a suitable electron transport layer is inserted into the organic thin film solar cell, so that a built-in electricfield is effectively enhanced, carrier transport is further improved, and recombination loss is reduced; the cathode interface modification material can reduce the cathode work function, reduce the electron injection barrier and improve the electron injection efficiency, thereby greatly improving the luminous efficiency, service life and stability of the device, and further increasing the cell efficiency.

Description

technical field [0001] The present invention relates to an improved cathode interface modification material, in particular to a cathode interface modification material using PFN and its derivatives to modify the cathode interface, a solar cell and its manufacturing method, and its application in photovoltaic devices, belonging to the photoelectric function Material and photovoltaic device technology field. Background technique [0002] Solar energy has the advantages of being clean and pollution-free, rich in resources, sustainable and safe. Solar cells have always attracted the attention of researchers because they can directly convert light energy into electrical energy. Organic solar cells have the advantages of low production cost, short energy recovery cycle, simple preparation process, good environmental protection, wide source of raw materials, large-area preparation, and flexible wearable devices. However, organic solar cells also have disadvantages such as low carr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08G61/10H01L51/46H01L51/48
CPCC08G61/10C08G2261/95C08G2261/514C08G2261/3142C08G2261/143C08G2261/1412C08G2261/124H10K85/151Y02E10/549
Inventor 刘继翀陈琪叶枫叶唐峰陈立桅
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products