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Non-refrigeration terahertz detector with adjustable working frequency

A terahertz detector and operating frequency technology, which is applied to thermoelectric devices with thermal changes in dielectric constant, etc., can solve the problems of slow response speed and long time of the device, and achieve the effect of simple structure, good thermal insulation performance and good application prospect.

Inactive Publication Date: 2018-11-16
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, it takes a long time for the absorption layer to convert the optical signal into a thermal signal and then transmit it to the pyroelectric material layer, and at the same time, the large capacitance area and other reasons lead to the slow response speed of the device.

Method used

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  • Non-refrigeration terahertz detector with adjustable working frequency
  • Non-refrigeration terahertz detector with adjustable working frequency
  • Non-refrigeration terahertz detector with adjustable working frequency

Examples

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Effect test

Embodiment 1

[0018] An uncooled terahertz detector with adjustable working frequency. In this embodiment, Si is selected as the substrate. First, the substrate is cleaned, and then a layer of polyimide film is spin-coated on its surface, and then a gold film is plated on the polyimide film by electron beam evaporation, and then spin-coated to prepare For the dielectric cavity layer, UV lithography is used to transfer the top layer pattern, and then the top layer metal is plated, followed by wet stripping, and finally optical and electrical tests are performed. The specific implementation steps are as follows:

[0019] 1. Substrate cleaning. Put the Si wafer in alcohol for 10 minutes and ultrasonically remove the oil on the surface of the substrate. After ultrasonic cleaning, quickly take it out and dry it with nitrogen.

[0020] 2. Preparation of polyimide film. A layer of polyimide film was spin-coated on the Si wafer, followed by annealing at 80° C., 120° C., 150° C., 180° C., and 250...

Embodiment 2

[0028] An uncooled terahertz detector with adjustable working frequency. In this embodiment, Si is selected as the substrate. First, the substrate is cleaned, and then a layer of polyimide film is spin-coated on its surface, and then a gold film is plated on the polyimide film by electron beam evaporation, and then spin-coated to prepare For the dielectric cavity layer, UV lithography is used to transfer the top layer pattern, and then the top layer metal is plated, followed by wet stripping, and finally optical and electrical tests are performed. The specific implementation steps are as follows:

[0029] 1. Substrate cleaning. Put the Si wafer in alcohol for 10 minutes and ultrasonically remove the oil on the surface of the substrate. After ultrasonic cleaning, quickly take it out and dry it with nitrogen.

[0030] 2. Preparation of polyimide film. A layer of polyimide film was spin-coated on the Si wafer, followed by annealing at 80°C, 120°C, 150°C, 180°C, and 250°C for o...

Embodiment 3

[0038] An uncooled terahertz detector with adjustable working frequency. In this embodiment, Si is selected as the substrate. First, the substrate is cleaned, and then a layer of polyimide film is spin-coated on its surface, and then a gold film is plated on the polyimide film by electron beam evaporation, and then spin-coated to prepare For the dielectric cavity layer, UV lithography is used to transfer the top layer pattern, and then the top layer metal is plated, followed by wet stripping, and finally optical and electrical tests are performed. The specific implementation steps are as follows:

[0039] 1. Substrate cleaning. Put the Si wafer in alcohol for 10 minutes and ultrasonically remove the oil on the surface of the substrate. After ultrasonic cleaning, quickly take it out and dry it with nitrogen.

[0040] 2. Preparation of polyimide film. A layer of polyimide film was spin-coated on the Si wafer, followed by annealing at 80°C, 120°C, 150°C, 180°C, and 250°C for o...

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Abstract

The invention discloses a non-refrigeration terahertz detector with an adjustable working frequency. The terahertz detector is composed of a metal-medium-metal structure and a substrate, and comprisesa metal microstructure, a medium cavity layer, a metal thin film layer, a matching layer and a flexible substrate layer from the top to bottom. The thickness of the medium cavity layer and the size and shape of the metal microstructure can adjust the detection frequency of the terahertz detector. The terahertz detector does not need an extra absorption material, and does not need refrigeration and has the prominent advantages of heat insulation performance, polarization selection and the like; and the terahertz detector has a series of advantages of simple structure, easy realization of large-area preparation, wavelength adjustability, flexible and bendable properties and the like, and has a high application prospect in terahertz signal detection.

Description

technical field [0001] The invention relates to the field of functional materials, relates to an uncooled terahertz detector with adjustable working frequency, in particular to an integrable and adjustable frequency uncooled terahertz detector. technical background [0002] Terahertz light wave is an electromagnetic wave with a wavelength between microwave and infrared wave, and its frequency is about 0.1-10THz. The energy range corresponding to terahertz photons matches the low-frequency vibration energy range of molecules and materials. Due to its special position in the electromagnetic spectrum, terahertz technology can be widely used in broadband communication, medical diagnosis, environmental detection, security, military, nuclear technology and other industries. It belongs to the popular scientific and technological fields of basic research and cutting-edge research. Terahertz detection technology has important research value in the development of terahertz technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L37/02H10N15/10
CPCH10N15/10
Inventor 潘晓航沈宏郝加明王建禄孟祥建戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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