LED epitaxy structure and growth method based on graphene substrate and LED

Abstract

The invention discloses an LED epitaxial structure based on a graphene substrate, a growing method and an LED. The graphene substrate comprises a substrate and a graphene layer positioned on the surface of one side of the substrate. The LED epitaxial structure comprises a buffer layer grown on the graphene substrate and an N-type GaN layer, an active layer and a P-type GaN layer which are grown onthe buffer layer in an overlapped manner in sequence, wherein the buffer layer comprises buffer sub-layers grown on the surface of the side, away from the substrate, of the graphene layer; the buffersub-layers are AlN buffer sub-layers, GaN buffer sub-layers, InGaN buffer sub-layers or AlGaInN buffer sub-layers. Through the technical scheme provided by the invention, the buffer layer of the LEDepitaxial structure is grown on the graphene substrate, the lattice mismatch between the LED epitaxial structure and the graphene substrate is reduced, the stress between the graphene substrate and the LED epitaxial structure is reduced, and then the LED epitaxial structure with high crystalline quality can be prepared, so that a polarization electric field is reduced effectively, the bending of an energy band is reduced, and the composite efficiency of electrons and holes is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, more specifically, to a graphene substrate-based LED epitaxial structure and growth method and LED. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a very influential new product in the emerging industry of information optoelectronics. It has the advantages of small size, colorful colors, low energy consumption, and long service life. It is widely used in lighting, Display screens, signal lights, backlights, toys and other fields. Among them, light-emitting diodes represented by GaN are low in cost, and their epitaxy and chip processes are relatively mature, and they are still leading the cutting-edge and hot technologies. [0003] With the increasing application of blue GaN-based LEDs, people pay more attention to the brightness of blue GaN-based LEDs. The existing blue GaN-based LEDs usually grow GaN materi...

AI Technical Summary

Problems solved by technology

However, it is relatively difficult to grow LED epitaxial structures on graphene substrates, mainly due to the large lattice mismatch between graphene and LED epitaxial structures.

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