A high-performance optoelectronic device based on carbon nanotube/graphene Schottky junction

A carbon nanotube, optoelectronic device technology, applied in electrical components, photovoltaic power generation, semiconductor devices, etc., can solve the problems of limiting the detectability of devices, large dark current of devices, etc., to improve optoelectronic performance, reduce dark current, and improve light absorption effect

Active Publication Date: 2020-03-10
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the ultra-high conductivity of graphene makes the dark current of the device larger, which limits the improvement of the detectable rate of the device.

Method used

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  • A high-performance optoelectronic device based on carbon nanotube/graphene Schottky junction
  • A high-performance optoelectronic device based on carbon nanotube/graphene Schottky junction
  • A high-performance optoelectronic device based on carbon nanotube/graphene Schottky junction

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Experimental program
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Effect test

Embodiment 1

[0023] This embodiment provides a high-performance photoconductive detector based on carbon nanotube / graphene Schottky junction, and its structural diagram is as follows figure 1 shown. The photoconductive device includes an insulating substrate 1, a carbon nanotube network 2, an island graphene 3, and a patterned electrode 4, and its construction method is as follows:

[0024] (1) Si / SiO 2 (300nm) substrate as an insulating base, in Si / SiO 2 (300nm) island-shaped CVD graphene is transferred on the substrate by wet transfer method;

[0025] (2) A patterned Au electrode pair is deposited using a traditional micromachining process, and the island-shaped graphene outside the channel is removed by oxygen plasma etching;

[0026] (3) The semiconducting SWCNTs network (10nm) was deposited between the Au electrode pair by drop-coating method. Promptly obtain high-performance photoconductive detector, it is irradiated by 1064nm laser (30mW / cm 2 ) under the condition of photoelect...

Embodiment 2

[0028] This embodiment provides a high-performance field-effect transistor photodetector based on carbon nanotube / graphene Schottky junction, and its structural diagram is as follows Figure 4 shown. The photoconductive device is composed of a gate 8, a gate dielectric layer 7, a carbon nanotube network 2, an island graphene 3, a source 5, and a drain 6, and its construction method is as follows:

[0029] (1) Use highly doped Si as the gate, and thermally oxidize and grow SiO on its surface 2 (300nm) is the gate dielectric layer.

[0030] (2)Si / SiO 2 The island-shaped CVD graphene is transferred on the substrate by wet transfer method;

[0031] (3) A patterned Au electrode pair is deposited as a source-drain electrode using a traditional micromachining process, and the island-shaped graphene outside the channel is removed by oxygen plasma etching;

[0032] (4) The semiconducting SWCNTs network (15nm) was deposited between the source and drain electrodes by transfer method....

Embodiment 3

[0034] This embodiment provides a high-performance photoconductive detector based on carbon nanotube / graphene Schottky junction. The photoconductive device includes an insulating substrate, a semiconducting SWCNTs network, patterned graphene, and patterned electrodes. Its construction method is as follows:

[0035] (1) Transfer CVD continuous graphene to Si / SiO by wet transfer method 2 (300nm) on the substrate;

[0036] (2) Patterned graphene was obtained by traditional photolithography process and oxygen plasma treatment process.

[0037] (3) A patterned Au electrode pair is deposited using a traditional micromachining process, and the patterned graphene outside the channel is removed by oxygen plasma etching;

[0038] (4) The semiconducting SWCNTs network (1nm) was deposited on the patterned graphene surface by spin-coating method and connected to the Au electrode. That is, a high-performance photoconductive detector is obtained.

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Abstract

The invention relates to a high-performance photoelectric device based on a carbon nano tube / graphene Schottky junction. The high-performance photoelectric device comprises an insulating base, an electrode pair arranged on two sides of the upper surface of the insulating base, a carbon nano tube network positioned between the electrode pair, and island-like graphene positioned inside the carbon nano tube network. Compared with the prior art, the Schottky structure is formed by using the island-like graphene and the carbon nano tube network so that photogenerated holes inside the carbon nano tube are transferred and limited to the island-like graphene, so that the recombination probability of photogenerated carriers is greatly reduced, simultaneously, dark current caused by continuous graphene as a conducting channel is greatly reduced, and then the photoelectric performance of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoelectric devices, in particular to a high-performance photoelectric device based on carbon nanotube / graphene Schottky junction. Background technique [0002] Semiconducting carbon nanotubes have a wide band gap, high carrier mobility, high thermal conductivity, large light absorption coefficient and excellent chemical stability, and are considered ideal materials for building next-generation optoelectronic devices. In particular, single-walled carbon nanotubes (SWCNTs) are semiconductors with a diameter bandgap that is inversely proportional to its diameter. By selecting SWCNTs with appropriate diameters, high-performance near-infrared-short-wave infrared optoelectronic devices can be constructed. The light absorption coefficient of carbon nanotubes (104-105cm-1) is an order of magnitude higher than that of traditional narrow-bandgap semiconductors, and it is expected to use ultra-thin ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/108H01L31/028H01L31/0352
CPCH01L31/028H01L31/035227H01L31/108Y02E10/547
Inventor 苏言杰蔡葆昉陶泽军张亚非杨志
Owner SHANGHAI JIAOTONG UNIV
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