A silicon carbide mosfet drive circuit

Abstract

The invention provides a silicon carbide MOSFET driving circuit, which relates to the field of power conversion circuits. A PWM control circuit generates a PWM pulse signal. After the PWM pulse signalpasses through a driving signal amplifying circuit, a silicon carbide MOSFET switch is controlled by a resistor, and a power supply outputs +15V, 0V and -3V DC voltages. The +15V and -3V DC voltagessupply power to the driving signal amplifying circuit, and the 0V is connected to the source of the silicon carbide MOSFET. The silicon carbide MOSFET driving circuit utilizes the driving negative voltage shutdown to reduce crosstalk between the upper and lower tubes of the bridge arm circuit in the power electronic converter, avoiding the bridge arm direct connection, and improving the reliability of the silicon carbide MOSFET; the diode can clamp the gate voltage to a safe range, avoiding breakdown of the silicon carbide MOSFET gate; the circuit uses the MOS transistor M1 to form a dischargeloop, which speeds up the turn-off speed of the silicon carbide MOSFET, improves the switching speed of the silicon carbide MOSFET, and reduces the switching loss.

Description

technical field [0001] The invention relates to the field of power conversion circuits, in particular to a drive circuit applied to power switch tubes. Background technique [0002] Power electronic converters continue to develop in the direction of high frequency, miniaturization and high reliability. High frequency is the development trend of power electronic conversion technology. At present, silicon MOSFETs and IGBTs are widely used in the field of power electronic converters. After decades of application, the performance of ordinary silicon MOSFETs is close to the application limit, which has become one of the main factors restricting the performance of converters. As a new type of power device, silicon carbide MMOSFET has the characteristics of high withstand voltage, high operating temperature, short body diode reverse recovery time, and small parasitic capacitance. Therefore, making full use of the advantages of silicon carbide MOSFET can simplify the converter topol...

AI Technical Summary

Problems solved by technology

Compared with silicon MOSFETs, silicon carbide MOSFETs have the advantages of small on-resistance, fast switching speed, and high blocking voltage, but the gate turn-on voltage of silicon carbide MOSFETs is low, and they are more susceptible to interference under high-voltage and high-frequency switching states False conduction occurs, and the upper limit of gate turn-on voltage is low, and gate voltage spikes during operation are more likely to cause breakdown and damage to the gate of the device. These characteristics limit the application of silicon carbide, and silicon carbide MOSFETs cannot be simply used in practical applications. To directly replace silicon MOSFETs, corresponding drive circuits must be designed to ensure safe and reliable operation of silicon carbide MOSFETs and give full play to the performance advantages of silicon carbide MOSFETs

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