Laterally diffused metal oxide semiconductor structure and method for forming same

Abstract

The present invention provides a laterally diffused metal oxide semiconductor structure and a method for forming the same. A conductor layer located above a first dielectric layer and a voltage-withstanding layer is divided into a first conductor which is at least partially located in the first dielectric layer and a second conductor which is at least partially located on the voltage-withstandinglayer, thus the first conductor and the second conductor are spatially isolated and can be connected to different potentials such that the semiconductor structure maintains a high breakdown voltage ina shutdown state. Furthermore, an interface between the first dielectric layer and the voltage-withstanding layer is covered by one of the first conductor and the second conductor, the gate charge ofthe semiconductor structure can be effectively reduced, and so that the semiconductor structure is adapted to high frequency applications.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more particularly, to a laterally diffused metal oxide semiconductor structure and a forming method thereof. Background technique [0002] In the existing laterally diffused metal oxide semiconductor structure 100 such as figure 1 As shown, it generally includes a P-type substrate PSUB, a high-voltage N-type well region HVNW located in the P-type substrate PSUB, and a P-type body region Pbody and an N-type drift region N-drift are formed in the high-voltage N-type well region HVNW , the source region N+ and the drain region N+ are respectively formed in the P-type body region Pbody and the N-type drift region N-drift, and the body contact region P+ is also formed in the body region Pbody and is in contact with the source region N+, and in The surface of the semiconductor structure 100 is also provided with a gate dielectric layer (not marked in the figure) adjacent to the sour...

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Problems solved by technology

Therefore, when the semiconductor structure 100 is in the off state, the potential on the thick oxygen layer Oxdie cannot assist in depleting the N-type drift region N-drift, and the high voltage breakdown resistance of the structure cannot be maintained.

In addition, the gate electrode extends to the top of the N-type drift region N-drift, and the gate-drain region overlap is relatively large, so that the gate charge Qgd is relatively large, which limits the high-frequency application of the semiconductor structure 100

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