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Aluminum silicon carbide material nickel plating method

A technology of aluminum silicon carbide and electroless plating, which is applied in the direction of liquid chemical plating, superimposed layer plating, metal material coating process, etc., can solve problems such as shedding, difficulty in metal plating on ceramic surfaces, and easy occurrence of pinhole plating, etc. Achieve the effect of bright coating, low cost and wide application range

Inactive Publication Date: 2018-09-28
西安朗赛精密机械有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, for aluminum silicon carbide composite materials with high volume fraction (SiC content greater than 50%), due to the relatively high content of silicon carbide, it is difficult to plate metal on the ceramic surface, and the surface is prone to problems such as pinholes and coating peeling off.
At present, there is no mature technology. The present invention successfully solves the problem of aluminum silicon carbide coating through multi-layer Ni plating. The coating has strong bonding force and strong surface weldability.

Method used

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  • Aluminum silicon carbide material nickel plating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] S1. First degrease and dry with 40g / L acetone degreasing agent; then wash with water at a temperature of 30°C for 1min, clean with a special weak acid salt, decontaminate and activate the surface, room temperature (19°C), time 20Sec;

[0038] S2. The aluminum silicon carbide substrate is grounded with copper under vacuum, and then the surface is plated with nickel phosphorus with a thickness of 1um by physical vapor deposition, and washed with water according to step S1 after plating;

[0039] S3. Nickel immersion is prepared into a nickel plating solution by three solutions of nickel sulfate 300g / L, phosphoric acid 30g / L, and 40% hydrofluoric acid 30mL / L. The temperature is controlled at 19°C and the time is 20Sec for activation reaction, and then electroless nickel plating is carried out. Prime for 20 minutes, use Atotech 2060 medium phosphorus chemical nickel, wash with water according to step S1 after plating;

[0040] S4, carry out alkali washing by the solution pr...

Embodiment 2

[0043] S1. First degrease and dry with 40g / L acetone degreasing agent; then wash with water at a temperature of 50°C for 6 minutes, clean with a special weak acid salt, decontaminate and activate the surface, room temperature (26°C), time 40Sec;

[0044] S2. The aluminum silicon carbide substrate is grounded with copper under vacuum, and then the surface is plated with nickel phosphorus with a thickness of 3um by physical vapor deposition, and washed with water according to step S1 after plating;

[0045] S3. Nickel immersion is prepared by three solutions of nickel sulfate 300g / L, phosphoric acid 30g / L, and 40% hydrofluoric acid 30mL / L to prepare a nickel plating solution. The temperature is controlled at 22°C and the time is 40Sec to activate the reaction, and then electroless nickel phosphorus plating Prime for 50 minutes, use Atotech 2060 medium phosphorus chemical nickel, wash with water according to step S1 after plating;

[0046] S4, carry out alkali washing by the soluti...

Embodiment 3

[0049] S1. First degrease and dry with 40g / L acetone degreaser; then wash with water at a temperature of 70°C for 10 minutes, and then clean with a special weak acid salt to decontaminate and activate the surface at a temperature of 30°C and a time of 50Sec;

[0050] S2. The aluminum silicon carbide substrate is grounded with copper under vacuum, and then the surface is plated with nickel phosphorus with a thickness of 5um by physical vapor deposition, and washed with water according to step S1 after plating;

[0051] S3. Nickel immersion is prepared by three solutions of nickel sulfate 300g / L, phosphoric acid 30g / L, and 40% hydrofluoric acid 30mL / L to prepare a nickel plating solution. The temperature is controlled at 30°C and the time is 60Sec for activation reaction, and then electroless nickel phosphorus plating Prime for 80 minutes, use Atotech 2060 medium phosphorus chemical nickel, wash with water according to step S1 after plating;

[0052] S4, carry out alkali washing...

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Abstract

The invention discloses an aluminum silicon carbide material nickel plating method. The method comprises the steps of plating multiple nickel layers; conducting film plating through a physical vapor deposition method after render plating and then conducting render plating again; conducting cleaning before and after render plating; conducting film plating through chemical plating; conducting bakingand heat treatment to complete nickel plating after completion of film plating. The aluminum silicon carbide material nickel plating method is simple in process, convenient to operate, low in cost, high in efficiency, wide in application range, free of environmental pollution and capable of achieving industrial production. The obtained plating layers are bright, smooth, uniform and compact and are free of blistering, stripping and cracks through optical microscope observation.

Description

technical field [0001] The invention belongs to the technical field of surface modification of metal composite materials, and in particular relates to a Ni plating method for aluminum silicon carbide materials. Background technique [0002] Aluminum-based silicon carbide (AlSiC) composites have excellent mechanical properties such as high specific strength and specific stiffness, low thermal expansion coefficient, low density, high micro-yield strength, good dimensional stability, thermal conductivity, wear resistance, and fatigue resistance. and physical properties, are used in electronic packaging building block materials. However, aluminum-based silicon carbide composite packaging components often need to be connected with different materials in actual use. [0003] At present, for aluminum silicon carbide composite materials with high volume fraction (SiC content greater than 50%), due to the relatively high content of silicon carbide, it is difficult to plate metal on ...

Claims

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Application Information

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IPC IPC(8): C23C18/32C23C14/18C23C18/16C23C18/18C23C28/02
Inventor 刘波波何娟
Owner 西安朗赛精密机械有限公司
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