Formation method of semiconductor structure
A semiconductor and gas technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to solve the problem that the threshold voltage of transistors is difficult to meet design requirements
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0025] As mentioned in the background, the threshold voltage of the semiconductor structure formed in the prior art is difficult to meet the design requirements.
[0026] The method for forming a semiconductor structure includes: providing a substrate with a dielectric layer on the substrate, an opening in the dielectric layer, and the opening passing through the dielectric layer; forming a gate dielectric layer at the bottom of the opening; A work function layer is formed on the gate dielectric layer; after the work function layer is formed, a gate is formed in the opening.
[0027] Wherein, the semiconductor structure is an NMOS transistor, and the work function layer is titanium aluminum. The work function layer is used to reduce the threshold voltage of the formed semiconductor structure, and the precursor for forming the work function layer is a carbon-containing precursor. In the process of forming the work function layer, carbon atoms in the precursor inevitably enter ...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com