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MEMS device, sound transducer, method for forming the MEMS device, and method for operating such MEMS device

A technology of equipment and conductive layers, applied in the direction of semiconductor electrostatic transducers, electrostatic transducer microphones, electrostatic transducer speakers, etc., can solve the problem of affecting MEMS microphones, and the electrical output signal does not provide sufficient correction of the audible input signal. , sound waves or sound pressure changes, etc., to achieve the effect of high mechanical robustness

Active Publication Date: 2018-09-14
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case where the MEMS device is implemented as a MEMS microphone, for example, parasitic capacitances can affect the MEMS microphone such that the electrical output signal does not provide a sufficiently correct reproduction of the audible input signal, i.e. the incoming sound wave or sound pressure changes

Method used

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  • MEMS device, sound transducer, method for forming the MEMS device, and method for operating such MEMS device
  • MEMS device, sound transducer, method for forming the MEMS device, and method for operating such MEMS device
  • MEMS device, sound transducer, method for forming the MEMS device, and method for operating such MEMS device

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Embodiment Construction

[0030] In the following description, embodiments are discussed in detail, however it should be understood that the embodiments provide many applicable concepts that can be implemented in various specific semiconductor devices that can be capacitively read, such as capacitive MEMS devices. The specific embodiments discussed are merely specific ways to make and use the inventive concepts, and do not limit the scope. In the description of the following embodiments, the same or similar elements having the same function have the same reference symbols or the same names, and descriptions of such elements are not repeated for each embodiment. Furthermore, features of different embodiments described herein may be combined with each other unless explicitly stated otherwise.

[0031]In the following, the inventive concept is generally described with respect to embodiments in the case of capacitive MEMS devices, where the following description is also applicable to any MEMS acoustic tran...

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Abstract

A capacitive MEMS device, a capacitive MEMS sound transducer, a method for forming a capacitive MEMS device and a method for operating a capacitive MEMS device are disclosed. In an embodiment the capacitive MEMS device includes a first electrode structure comprising a first conductive layer and a second electrode structure comprising a second conductive layer, wherein the second conductive layer at least partially opposes the first conductive layer, and wherein the second conductive layer includes a multiple segmentation which provides an electrical isolation between at least three portions ofthe second conductive layer.

Description

technical field [0001] The present invention relates to capacitive MEMS devices (MEMS, microelectromechanical systems), capacitive MEMS acoustic transducers, methods of manufacturing capacitive MEMS devices and methods of operating capacitive MEMS devices. Some embodiments relate to MEMS microphones and / or MEMS speakers. Background technique [0002] When designing capacitive MEMS devices such as acoustic transducers, pressure sensors, acceleration sensors, microphones or speakers, it is often desirable to achieve a high signal-to-noise ratio (SNR) of the transducer output signal. The continued miniaturization of transducers presents new challenges for the desired high signal-to-noise ratio. MEMS microphones and to some extent MEMS speakers (such as may be used in microphones, laptops and similar (mobile or stationary) devices) can today be implemented as semiconductor (silicon) microphones or microelectromechanical systems (MEMS). In order to compete and provide the desir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/04H04R31/00
CPCH04R19/04H04R31/003H04R2201/003H04R2231/001H04R7/04H04R19/005H04R19/02H04R2499/11
Inventor A·德厄
Owner INFINEON TECH AG
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