A graphene pressure sensor

Abstract

The invention discloses a graphene pressure sensor, which comprises a packaging shell. The inside of the packaging shell is a hollow installation interlayer, and a pressure sensing device is arranged inside the hollow installation interlayer. The pressure sensing device includes an alloy steel elastic substrate, an alloy steel elastic A signal processing unit is arranged under the substrate, and a buffer portion is arranged between the signal processing unit and the alloy steel elastic substrate, an insulating protective layer is arranged on the upper surface of the alloy steel elastic substrate, and a pressure strain relief layer is arranged above the insulating protective layer. The pressure-strain device includes a conductive layer and a graphene film, and a number of insulating particles are arranged between the graphene film and the conductive layer. The accuracy and reliability greatly enhance the versatility of the pressure sensor, and the good flexibility and strong mechanical strength also prolong the service life of the pressure sensor.

Description

technical field [0001] The invention relates to the technical field of pressure sensors, in particular to a graphene pressure sensor. Background technique [0002] A pressure sensor refers to a device or device that can sense pressure signals and convert the pressure signals into usable output electrical signals according to certain rules. Pressure sensors are usually composed of pressure sensitive elements and signal processing units. According to different test pressure types , pressure sensors can be divided into gauge pressure sensors, differential pressure sensors and absolute pressure sensors. According to different working environment temperatures, pressure sensors can be divided into high-temperature pressure sensors and low-temperature pressure sensors. A pressure transmitter, which is widely used in various industrial automatic control environments, involving water conservancy and hydropower, railway transportation, intelligent buildings, production automatic contr...

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Problems solved by technology

[0004] The silicon-on-sapphire pressure sensor is a single crystal silicon thin film grown by heteroepitaxial growth on the sapphire crystal, which can work in a high temperature environment of 350°C. However, the lattice mismatch between sapphire and silicon materials is serious, and it is difficult to ensure long-term stable operation at high temperatures. It is also not sensitive to temperature changes; the silicon-on-insulator pressure sensor uses insulating buried oxide layer isolation to replace PN junction isolation, which raises the operating temperature of the device to 500°C, but due to the limitation of the silicon material itself, it cannot be applied to higher Temperature environment: SiC pressure sensors are currently the mainstream research direction in the world. The operating temperature of the prototype is as high as 600°C. However, during the device preparation process, high-energy ion implantation and other processes must be performed on SiC, which introduces large damage and many defects. Serious non-linear temperature drift and poor repeatability

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