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Perovskite film and preparation method thereof and application of perovskite film in photoelectric devices

A technology of perovskite and perovskite materials, which can be used in electric solid devices, photovoltaic power generation, electrical components, etc., and can solve problems such as loss and migration of organic ions

Active Publication Date: 2018-09-04
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention aims to solve the stability problem in the preparation of perovskite film in the above-mentioned prior art, that is, the loss and migration of organic ions during the annealing process or the illumination process

Method used

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  • Perovskite film and preparation method thereof and application of perovskite film in photoelectric devices
  • Perovskite film and preparation method thereof and application of perovskite film in photoelectric devices
  • Perovskite film and preparation method thereof and application of perovskite film in photoelectric devices

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Embodiment approach

[0064] The embodiment of the preparation method of perovskite film of the present invention comprises the following steps:

[0065] 1. Combine AX and PbX 2 Dissolve in the precursor solvent according to a certain stoichiometric ratio (the precursor solvent is a polar solvent with a high boiling point that can dissolve the perovskite material, such as DMF, DMSO and γ-butyrolactone, etc. or the above two and above mixed solvents) to form a solution with a mass concentration of 25% to 40%. Heat to 70 °C until the solid is completely dissolved, and stir overnight to form a transparent and uniform perovskite precursor solution.

[0066] 2. Take the above precursor solution and drop it on the substrate. The substrate can be an indium tin oxide substrate (ITO / SnO) coated with tin oxide 2 ), dense titanium dioxide (c-TiO 2) of fluorine-doped tin oxide (FTO) glass substrates (FTO / c-TiO 2 ) or FTO / c-TiO coated with porous titania 2 Substrate (FTO / c-TiO 2 / m-TiO 2 ). Within a ce...

Embodiment 1

[0072] The preparation method described in this embodiment comprises the following steps:

[0073] 1. Change CH 3 NH 3 I, NH 2 CHNH 3 I and PbI 2 According to the stoichiometric ratio of 0.15:0.85:1.025, it was dissolved in anhydrous DMF and DMSO mixed solution (600mg / 78mg) to form a solution with a mass concentration of 40%. Heat to 70 °C until the solid is completely dissolved, and stir overnight to form a transparent and uniform perovskite precursor solution.

[0074] 2. Take 100uL of the above precursor solution and drop it on a 2cm×2cm ITO / SnO 2 The substrate was spin-coated at 4000 rpm for a total time of 30 seconds. 15 seconds before the end of the spin coating, 500 uL of the chlorobenzene solution containing compound R1 was quickly dropped. After the spin coating, the substrate was dried on a hot plate at 130° C. for 15 minutes to remove residual solvent.

Embodiment 2

[0079] The steps are as in Example 1, except that the anti-solvent is changed to a solution containing compound R2, and other conditions remain unchanged.

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Abstract

The invention relates to a stable perovskite film and a preparation method thereof and an application of the perovskite film in photoelectric devices. According to the perovskite film, an anti-solventcontaining small organic molecules of a conjugated pi system is dropwise added in a one-step spin-coating preparation process, and a mixed layer of the small organic molecules and perovskite is formed after annealing. Through supermolecular cation-pi interaction between the small organic molecules of the conjugated pi system and cations in the perovskite, the defect of the perovskite film can begreatly reduced and the stability is significantly improved. Furthermore, the invention further provides the corresponding photoelectric devices, such as a perovskite cell, a light-emitting diode anda photoelectric detector, prepared by using the preparation method of the perovskite film. Compared with a standard device to which the small organic molecules of the conjugated pi system are not added, the obtained photoelectric devices have the advantages that the performance and the stability are improved.

Description

technical field [0001] The invention belongs to the technical field of perovskite thin films, and in particular relates to a novel and stable perovskite thin film and a preparation method thereof, and the application of the perovskite thin film in the field of photoelectric devices. Background technique [0002] Since 2009, organic-inorganic hybrid perovskite materials (APbX 3 , A is CH 3 NH 3 + , NH 2 CHNH 2 + 、Cs + One or two kinds of mixed ions, X is Cl, Br, I and other halogen ions) because of its high light absorption coefficient, excellent carrier separation and good carrier transport ability, low cost and The advantages of wettable preparation have attracted widespread attention in the fields of optoelectronics and other fields. Currently, the efficiency of cells based on perovskite materials has increased from 3.8% in 2009 (J.Am.Chem.Soc., 2009, 131, 6050–6051) to 22.1% in 2017 (Science 2017, 356, 1367-1379 ), making it one of the most important research hot...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/50H01L51/54
CPCH10K85/30H10K30/00H10K50/00Y02E10/549
Inventor 乔娟王瑞马福生
Owner TSINGHUA UNIV
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