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Inorganic full-solid-state electrochromic device with quick responsiveness and preparation method

An electrochromic device, all-solid-state technology, applied in instruments, nonlinear optics, optics, etc., can solve problems such as uneven distribution of electric field, long discoloration time, uneven discoloration, etc., to improve the distribution of electric field and voltage, improve Effect of uneven discoloration and improvement of discoloration response time

Inactive Publication Date: 2018-09-04
安徽鑫昊等离子显示器件有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, for an inorganic all-solid-state electrochromic device whose film material is solid inorganic and has a large area, on the one hand, due to the characteristics of a solid film, lithium ions are hindered during the migration process, resulting in a longer discoloration time and affecting device control. timeliness of response
On the other hand, when a voltage is applied to ITO, due to the large area of ​​the large-scale color-changing device, the impedance of ITO itself causes a voltage drop, so that the electric field between the ITOs cannot be uniformly distributed, resulting in a slow discoloration reaction of the large-area electrode device. Uneven discoloration and other defects

Method used

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  • Inorganic full-solid-state electrochromic device with quick responsiveness and preparation method
  • Inorganic full-solid-state electrochromic device with quick responsiveness and preparation method
  • Inorganic full-solid-state electrochromic device with quick responsiveness and preparation method

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preparation example Construction

[0055] Correspondingly, an embodiment of the present invention provides a method for preparing an inorganic all-solid-state electrochromic device as described above, including the following steps:

[0056] On the substrate, a bottom protective layer and a bottom conductor layer are sequentially formed by vapor deposition, and the bottom conductor layer is not short-circuited;

[0057]On the bottom conductor layer, a color-changing layer, a conduction layer, a storage layer and a top conductor layer are sequentially formed by vapor deposition, and the top conductor layer is not short-circuited;

[0058] Using a laser to penetrate from the top conductor layer to the bottom conductor layer to form several cavity trenches, so that the top conductor layer is divided into multiple units;

[0059] An electrode is independently fabricated on each unit of the top conductor layer, and an intermediate electrode is fabricated on the bottom conductor layer corresponding to at least one cav...

Embodiment 1

[0074] Example 1: Preparation of dichromatic region devices

[0075] (1) The glass substrate (thickness 1.6mm, transmittance 92%, flatness 1.5%) is washed and dried, and enters the coating system.

[0076] (2) Sputtering rotating silicon target to prepare silicon dioxide; set power AC 30KW, atmosphere: argon and oxygen mixed, air pressure 3×10 -4 mbar, film thickness 15nm.

[0077] (3) Magnetron sputtering rotating indium tin oxide target to prepare indium tin oxide conductor layer; DC pulse power supply, power DC60KW, argon sputtering, air pressure 5×10 -4 mbar, film thickness 150nm.

[0078] In the atmospheric environment, the conductor layer is cut and scribed by laser etching P1, so that the conductor layer has two gaps on the left and right to avoid the bottom ITO short circuit; the gap width is 0.5mm.

[0079] (4) Radio frequency reactive sputtering to prepare a tungsten oxide layer; a metal tungsten target is used to make a tungsten oxide layer by radio frequency rea...

Embodiment 2

[0090] Example 2: Preparation of four-color-changing region devices

[0091] (1) The glass substrate (thickness 2.2mm, transmittance 92%, flatness 1.5%) is cleaned and dried, and enters the coating system.

[0092] (2) Sputtering rotating silicon target to prepare silicon dioxide; set power AC 30KW, atmosphere: argon and oxygen mixed, air pressure 3×10 -4 mbar, film thickness 15nm.

[0093] (3) Magnetron sputtering rotating indium tin oxide target to prepare indium tin oxide conductor layer; DC pulse power supply, power DC60KW, argon sputtering, air pressure 5×10 -4 mbar, film thickness 150nm.

[0094] In the atmospheric environment, the conductor layer is cut and scribed by laser etching P1, so that the conductor layer has two gaps on the left and right to avoid the bottom ITO short circuit; the gap width is 0.5mm.

[0095] (4) Radio frequency reactive sputtering to prepare a tungsten oxide layer; a metal tungsten target is used to make a tungsten oxide layer by radio freq...

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Abstract

The invention provides an inorganic full-solid-state electrochromic device with quick responsiveness and a preparation method thereof. The device comprises a substrate, a bottom protection layer, bottom conductor layers, color change layers, conduction layers, storage layers and top conductor layers, wherein the bottom protection layer, the bottom conductor layers, the color change layers, the conduction layer, the storage layers and the top conductor layers are arranged on the substrate in sequence; the inorganic full-solid-state electrochromic device is provided with multiple cavity slots, the cavity slots run through the bottom conductor layers from the top conductor layers, and each top conductor layer is divided into multiple units; each unit of each top conductor layer is independently provided with an electrode, middle electrodes are arranged on the portions, corresponding to one or more cavity slots, on the bottom conductor layers, and each unit of each top conductor layer andthe corresponding bottom conductor layer form an electric field; the top conductor layers and the bottom conductor layers have no short circuit. According to the inorganic full-solid-state electrochromic device, the electrodes are subjected to layout design, the large-area electrochromic device can be divided into multiple small-size units, the large-size device is subjected to partition control,the electric field and the voltage distribution condition of the device is improved, the whole color change response time of the device is prolonged, and the uneven color change phenomenon is avoided.

Description

technical field [0001] The invention relates to the field of electrochemical devices with electrically controllable reversible optics and / or energy transmission characteristics, in particular to an inorganic all-solid-state electrochromic device and a preparation method thereof, which have fast response. Background technique [0002] The so-called electrochromic means that the color-changing material passes through the H under the action of alternating high and low electric fields. + , Li + 、Na + The intercalation and desorption of alkali metal ions or other mobile ions, the color-changing material undergoes a reversible electrochemical reaction, and its optical properties undergo a reversible linear change with the change of the applied electric field. Therefore, according to the ambient temperature, lighting conditions, human will, etc., the precise control of light reflection, transmission, and absorption can be realized through the control of the external electric fiel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/155
CPCG02F1/155
Inventor 袁浩
Owner 安徽鑫昊等离子显示器件有限公司
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