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Method for growing single-crystal two-dimensional transitional metal sulphide

A transition metal and single crystal growth technology, applied in the field of nanomaterials, can solve the problems of difficulty in controlling the size and thickness of single crystal molybdenum sulfide film, high cost, etc., and achieve the effect of not easy to deteriorate, good crystallinity, and high quality

Active Publication Date: 2018-08-28
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the main problem in the preparation of high-quality molybdenum sulfide is the high cost, and it is difficult to control the size and thickness of single crystal molybdenum sulfide film.

Method used

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  • Method for growing single-crystal two-dimensional transitional metal sulphide
  • Method for growing single-crystal two-dimensional transitional metal sulphide
  • Method for growing single-crystal two-dimensional transitional metal sulphide

Examples

Experimental program
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Effect test

Embodiment 1

[0023] The present embodiment provides a kind of high-quality two-dimensional single-crystal transition metal sulfide (molybdenum disulfide), and its preparation comprises the following steps:

[0024] (a) Take 0.5g of ammonium molybdate tetrahydrate and 0.1g of potassium hydroxide respectively, dissolve them in 5mL of ultrapure water, and ultrasonically stir for 15 minutes each to make the solution transparent and clear, and obtain a molybdenum precursor solution;

[0025] (b) Take Si / SiO with a size of 1cm×1cm 2 The substrate was ultrasonically cleaned with acetone and ethanol for 15 minutes, and after the cleaning was complete, it was blown dry with nitrogen; the clean Si / SiO 2 Put the substrate on the spin coater, drop the precursor solution onto the Si / SiO 2 Spread the solution evenly on the surface of the substrate, then set the rotation speed to 6000rpm / s, and the spin coating time to 30 seconds for spin coating;

[0026] (c) After the spin coating is finished, the Si...

Embodiment 2

[0028] This embodiment provides a high-quality two-dimensional single-crystal transition metal sulfide (molybdenum disulfide), which is basically the same as the preparation process in Example 1, except that the temperature reaches 650°C and is kept for 45 minutes. about 120μm, such as figure 2 shown.

Embodiment 3

[0030] This example provides a high-quality two-dimensional single-crystal transition metal sulfide (molybdenum disulfide), which is basically the same as the preparation process in Example 1, except that the temperature is kept at 650° C. for 60 minutes.

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Abstract

The invention relates to a method for growing single-crystal two-dimensional transitional metal sulphide. The preparation method of the single-crystal two-dimensional transitional metal sulphide comprises the following steps: (a) dissolving transitional metal salt and strong alkali in water to obtain a mixture, and stirring the mixture to obtain a transparent and clarified precursor solution, wherein the transitional metal salt is inorganic molybdenum salt or inorganic tungsten salt, wherein a mass ratio of the transitional metal salt to the strong alkali is (1 to 10) to 1; (b) spin-coating the precursor solution on a substrate; (c) putting the substrate in the middle of a tubular furnace, taking and putting sulphur powder or selenium powder at a gas inlet end of the tubular furnace, and subsequently, vacuumizing the tubular furnace and filling inertia gas; heating to enable the sulphur powder or the selenium powder to be sublimed, enabling the sublimed sulphur powder or the selenium powder and the precursor solution to be reacted and annealed, and naturally cooling to obtain a final product. The two-dimensional metal prepared by the method has the advantages of high quality and good crystallinity, and moreover, the size of a triangular plate of the material can be grown greatly; the two-dimensional material can be directly applied to a semiconductor field effect tube, and additional transfer is not needed.

Description

technical field [0001] The invention belongs to the field of nanometer materials and relates to a transition metal sulfide, in particular to a method for growing a single crystal two-dimensional transition metal sulfide. Background technique [0002] In recent years, two-dimensional materials represented by graphene have attracted widespread international attention. This type of material has a single layer thickness of less than 1 nm, showing excellent physical properties and application prospects in devices. Since graphene has no band gap, it is greatly limited in the application of electronic devices. In this regard, the two-dimensional transition metal chalcogenide XM 2 (where X represents a transition metal atom, and M represents a chalcogen element) is considered to be a material that is expected to continue Moore's Law due to its semiconductor properties. Similar to graphene, two-dimensional transition metal chalcogenides are also a layered material, and the layers in...

Claims

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Application Information

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IPC IPC(8): C01G39/06C30B29/46
CPCC01G39/06C01P2002/72C01P2002/82C01P2004/01C01P2004/04C30B29/46
Inventor 邹贵付朱俊桐蒋怡宁戴晓赵杰易庆华
Owner SUZHOU UNIV
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