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A kind of LED chip with ultra-high reflectivity ultraviolet through-hole structure and preparation method thereof

A technology of LED chips and LED epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of easy oxidation of Al mirrors, easy oxidation of Ag, low reflectivity, etc., to increase the current expansion ability and current distribution Ability plus, high reflectivity effect

Active Publication Date: 2019-10-18
HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the ultraviolet through-hole structure LED chip has so many advantages, there are still many difficulties, because the ultraviolet band is divided into UVA (320-400nm), UVB (280-320nm) and UVC (200-280nm); UVB and UVC band metal Al has the highest reflectivity, while metal Ag has the highest reflectivity in the UVA band; however, traditional Ag reflectors have low reflectivity in the ultraviolet band and Ag is easy to oxidize, while Al reflectors also have the problems of easy oxidation and ohmic contact. There are great difficulties in the preparation

Method used

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  • A kind of LED chip with ultra-high reflectivity ultraviolet through-hole structure and preparation method thereof
  • A kind of LED chip with ultra-high reflectivity ultraviolet through-hole structure and preparation method thereof
  • A kind of LED chip with ultra-high reflectivity ultraviolet through-hole structure and preparation method thereof

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preparation example Construction

[0069] The method for preparing the above-mentioned LED chip with the ultraviolet through-hole structure includes,

[0070] LED epitaxial wafer growth step: provide epitaxial substrate 100, epitaxially grow LED epitaxial wafer on epitaxial substrate 100, LED epitaxial wafer includes n-type doped GaN film 101 grown on epitaxial substrate 100, grown on n-type doped InGaN or AlGaN / GaN multiple quantum wells on the GaN film 101, p-type doped GaN film 103 grown on the InGaNorAlGaN / GaN quantum wells;

[0071] ITO current spreading layer 104 preparation steps: use magnetron sputtering or electron beam evaporation process on the surface of the LED epitaxial wafer to prepare the ITO current spreading layer 104;

[0072] Annealing step: put the ITO current spreading layer 104 into an annealing furnace for annealing; opening the ITO current spreading layer 104 Preparation step: process the annealed ITO current spreading layer 104 by photolithography and wet etching to obtain the ITO curr...

Embodiment 1

[0090] A method for preparing an ultra-high reflectivity ultraviolet through-hole structure LED chip, comprising the following preparation steps:

[0091] LED epitaxial wafer growth step: provide an epitaxial substrate, and epitaxially grow LED epitaxial wafers on the epitaxial substrate, including n-type doped GaN thin film (n-GaN) grown on the epitaxial substrate, grown on n-type doped GaN thin film InGaN or AlGaN / GaN multiple quantum wells on the substrate, p-type doped GaN thin films grown on the InGaN / GaN quantum wells; the Si substrate takes the (111) plane as the epitaxial plane;

[0092] Preparation steps of ITO current spreading layer: Use magnetron sputtering or electron beam evaporation process on the surface of LED epitaxial wafer, substrate temperature is 300°C, oxygen partial pressure is 8×10 -2 Pa, thickness 1000A, prepared ITO current spreading layer with standard photolithography process and wet etching process;

[0093] Annealing step: The prepared ITO curre...

Embodiment 2

[0103] A method for preparing an ultra-high reflectivity ultraviolet through-hole structure LED chip, comprising the following preparation steps:

[0104] LED epitaxial wafer growth step: provide an epitaxial substrate, and epitaxially grow LED epitaxial wafers on the epitaxial substrate, including n-type doped GaN thin film (n-GaN) grown on the epitaxial substrate, grown on n-type doped GaN thin film InGaN or AlGaN / GaN multiple quantum wells on the substrate, p-type doped GaN thin films grown on the InGaN / GaN quantum wells; the Si substrate takes the (111) plane as the epitaxial plane;

[0105] Preparation steps of ITO current spreading layer: Use magnetron sputtering or electron beam evaporation process on the surface of LED epitaxial wafer, substrate temperature is 250°C, oxygen partial pressure is 8×10 -2 Pa, thickness 800A, prepared ITO current spreading layer with standard photolithography process and wet etching process;

[0106] Annealing step: The prepared ITO curren...

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Abstract

The invention discloses an ultrahigh reflectivity LED chip in an ultraviolet through-hole structure. The LED chip comprises an epitaxial substrate and a LED epitaxial wafer grown on the epitaxial substrate. The LED epitaxial wafer comprises an n-type doped GaN film, an InGaN or AlGaN / GaN multiple quantum well, and a p-type doped GaN film. The InGaN or AlGaN / GaN multiple quantum well is grown on the n-type doped GaN film. The p-type doped GaN film is grown on the InGaN / GaN quantum well. The epitaxial substrate is a Si substrate, a GaN substrate, a Cu substrate, a LSAT substrate, or a LiGaO2 substrate. The invention also provides a manufacturing method for the ultrahigh reflectivity LED chip in an ultraviolet through-hole structure. The LED chip has characteristics of high reflectivity in anultraviolet band and strong oxidation resistance while perfectly inheriting advantages of a vertical linear structure.

Description

technical field [0001] The invention relates to an LED chip, in particular to an LED chip with an ultra-high reflectivity ultraviolet through-hole structure and a preparation method thereof. Background technique [0002] Ultraviolet LEDs (UV LEDs) are mainly used in biomedicine, anti-counterfeiting identification, purification (water, air, etc.), computer data storage, and military affairs. And with the development of technology, new applications will continue to appear to replace the original technology and products, and ultraviolet LEDs have broad market application prospects. According to wavelength division, UV LEDs are divided into UV-ALED (320-410nm wavelength), UV-BLED (275-320nm) and UV-CLED (200-275nm). UV-ALED is mainly used for drying and curing, UV-B is used for biosensing, and UV-C is used for sterilization and purification. [0003] However, most of the UV chips on the market are sapphire-based horizontal flip-chip chips, and the vertical structure only has U...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/46H01L33/38
Inventor 李国强
Owner HEYUAN CHOICORE PHOTOELECTRIC TECH CO LTD
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