Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High power supply rejection ratio and low temperature drift band-gap reference voltage source

A technology of high power supply rejection ratio and reference voltage source, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., and can solve problems that cannot meet the temperature stability requirements of the reference voltage source

Pending Publication Date: 2018-08-24
HARBIN UNIV OF SCI & TECH
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, in the traditional bandgap reference source, the op amp is usually used to V BE The low-order term of the temperature coefficient is compensated, but the temperature drift coefficient achieved in this way can only reach a minimum of 20ppm / °C, which cannot meet the temperature stability requirements of the reference voltage source in high-precision places

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High power supply rejection ratio and low temperature drift band-gap reference voltage source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0071] like figure 1 As shown, the high power supply rejection ratio low-temperature drift bandgap reference voltage source includes: DC voltage source Vdd, pre-regulation circuit (1), bias circuit (2), operational amplifier (3), start-up circuit (4), temperature compensation Circuit (5), bandgap reference core circuit (6).

[0072] Wherein, the pre-adjustment circuit (1) includes: MOS field effect transistors M1, M2, M3, M4, M5, M6, M7, M8 and capacitor C1; wherein said transistors M1, M2, M5, M8 are PMOS field effect transistors Effect transistors; the transistors M3, M4, M6, and M7 are NMOS field effect transistors.

[0073] The sources of the PMOS field effect transistors M1 and M2 are connected and connected to the power supply voltage (VDD); the gate of the PMOS field effect transistor M1 is connected to the drain; the PMOS field effect transistor M1 is connected to the gate of M2; the PMOS field effect transistor M1 is connected to the gate of M2; Field effect transis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high power supply rejection ratio and low temperature drift band-gap reference voltage source which comprises a biasing circuit, an operational amplifier, a starting circuit,a preadjusting circuit, a temperature compensating circuit and a band-gap reference core circuit, wherein the biasing circuit is used for providing direct-current bias current for the operational amplifier, the design of the secondary operational amplifier is used for suppressing an electric potential drop low temperature drift coefficient of a band-gap reference source; the design of the starting circuit is used for the band-gap reference source to break away from a degeneracy point state; the design of the preadjusting circuit is used for the band-gap reference source to break away from direct power supply of power voltage to improve an output power supply rejection ratio; the design of the temperature compensating circuit is used for reducing a temperature drift coefficient of the whole circuit; the band-gap reference core circuit utilizes a current mode voltage reference structure and is used for reducing output voltage of the band-gap reference source. According to the band-gap voltage reference source disclosed by the invention, the preadjusting circuit structure is introduced, and high-order temperature compensation is performed; compared with traditional band-gap referencesource, the band-gap reference source has a higher power supply rejection ratio and a lower temperature drift coefficient and can be suitable for high-accuracy work requirements.

Description

technical field [0001] The invention relates to the field of analog integrated circuit design, in particular to a low-temperature drift bandgap reference voltage source with high power supply rejection ratio. Background technique [0002] In recent years, with the rapid development of the integrated circuit industry, the reference source is an indispensable component circuit in the analog chip, and its performance has attracted more and more attention. The bandgap reference source is widely used in registers, Linear voltage regulator, digital-to-analog conversion circuit. The main function of the bandgap reference source is to provide a stable reference voltage for the circuits of other modules, so that they can get predictable and repeatable results. The performance of the reference voltage source is decisive for the power consumption, speed, and stability of the entire circuit. effect. In order to make the circuit work normally in different external environments, and the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05F1/567
CPCG05F1/567
Inventor 宋明歆樊旭尧杨美中
Owner HARBIN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products