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Semiconductor composite heterojunction photoelectrode and manufacturing method thereof

A composite heterojunction and photoelectrode technology, which is applied in photovoltaic power generation, photosensitive equipment, circuits, etc., can solve the problems that restrict the development of the field of photo-splitting water, low utilization efficiency, and complicated preparation methods, so as to improve the efficiency of photo-splitting water , Utilization efficiency improvement, the effect of promoting chemical reaction

Active Publication Date: 2018-08-10
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current preparation methods of photoelectrodes are more complicated, the cost is higher, and the utilization efficiency of the prepared photoelectrodes is not high, which greatly restricts the development of the field of photolysis of water.

Method used

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  • Semiconductor composite heterojunction photoelectrode and manufacturing method thereof
  • Semiconductor composite heterojunction photoelectrode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Using FTO as the conductive substrate, the conductive substrate was ultrasonically cleaned in an ultrasonic machine for 30 minutes in the order of acetone, absolute ethanol and deionized water.

[0036] Dissolve 1.6169g of bismuth nitrate pentahydrate and 1.2808g of anhydrous citric acid in 10mL of nitric acid (concentration: 23.3%), and keep stirring until uniformly mixed. 0.39 g of ammonium metavanadate was dissolved in the above solution and stirred. After the solution was completely dissolved, 0.4 g of polyvinyl alcohol (PVA) was added and stirred for 5 hours to obtain a transparent blue solution.

[0037] Put the cleaned conductive substrate on the spin coater, use a pipette gun to take an appropriate amount of transparent blue solution and drop it on the conductive substrate, and obtain a bismuth vanadate film by spin coating. The spin coating speed is 4000 rpm. The process loops 5 times. The spin-coated conductive substrate was calcined in an annealing furna...

Embodiment 2

[0044] Prepare BiVO according to the method of Example 1 steps (1)-(3) 4 / CuO / TiO 2 Composite electrode, the difference is that in step (3), TiO with different cycle numbers is deposited by controlled ALD technology 2 program to obtain TiO with different thicknesses 2 , so that the TiO in step (3) 2 The thickness is 1 nm.

[0045] The above-prepared photoelectrodes were assembled into photoelectrochemical cells, and then water was split under different voltages. Under the voltage of 1.23V, the photocurrent of the photoelectrode prepared by the method of this embodiment can reach 0.412mA / cm 2 ; and with BiVO 4 / CuO sample as the working electrode photocurrent is only 0.299mA / cm 2 .

Embodiment 3

[0047] Prepare BiVO according to the method of Example 1 steps (1)-(3) 4 / CuO / TiO 2 For the composite electrode, the difference is that the reaction time in the water bath in step (2) is 15 minutes, so that the reaction time of the step of converting ZnO into CuO is different, and a CuO petal-shaped morphology with a different density from Example 1 is obtained.

[0048] The above-prepared photoelectrodes were assembled into photoelectrochemical cells, and then water was split under different voltages. Under the voltage of 1.23V, the photocurrent of the photoelectrode prepared by the method of this embodiment can reach 0.38mA / cm 2 ; and with BiVO 4 / CuO sample as the working electrode photocurrent is only 0.2mA / cm 2 .

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Abstract

The invention relates to a semiconductor composite heterojunction photoelectrode manufacturing method. A zinc oxide thin film with a thickness of 10 to 60 nm is deposited on a conductive base loaded with a bismuth vanadate nano thin film, and a zinc source and an oxygen source react under 150 to 200 DEG C to obtain the zinc oxide thin film; the conductive base after being processed is put to a copper salt aqueous solution, a replacement reaction is carried out under 60 to 100 DEG C, zinc oxide is converted into copper oxide, annealing is then carried out under 350 to 550 DEG C, and a conductive base loaded with a bismuth vanadate and copper oxide heterojunction is formed; and a titanium oxide thin film is deposited on the surface of the conductive base loaded with the bismuth vanadate andcopper oxide heterojunction, and a titanium source and an oxygen source react under 80 to 150 DEG C to obtain the titanium oxide thin film. The heterojunction has a petal-shaped appearance, the specific surface area of the electrode is increased, the loaded TiO2 is used as a promoter, a reaction between a hole and an electrolyte is promoted, and the water splitting efficiency is improved effectively.

Description

technical field [0001] The invention relates to the technical field of photoelectric electrodes, in particular to a semiconductor composite heterojunction photoelectrode and a preparation method thereof. Background technique [0002] Since the 21st century, with the continuous development of society, the two major problems of energy shortage and environmental degradation have gradually attracted people's attention, and the two have become the biggest crises restricting human progress and social development. Among them, the problem of energy crisis is becoming more and more serious, such as coal, oil, natural gas and other non-renewable energy sources are being exhausted day by day. Moreover, global environmental degradation problems such as air and water pollution and the greenhouse effect caused by burning various fossil fuels will also make us humans fall into a predicament from which we cannot extricate ourselves. In order to solve this problem, countries all over the wo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042
CPCH01G9/2027H01G9/2031Y02E10/542
Inventor 孟林兴田维李亮
Owner SUZHOU UNIV
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