Single-axis and double-axis magnetic field sensors and preparation method thereof

A magnetic field sensor, single-axis technology, applied in the direction of the magnitude/direction of the magnetic field, can solve problems such as difficulty in meeting mass production, low yield, and unavoidable mechanical errors

Pending Publication Date: 2018-08-10
QINGDAO RES INST OF BEIHANG UNIV +1
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to avoid mechanical errors when splicing multiple chips, which leads to low sensitivity and low yield of finished products, making it difficult to meet the needs of mass production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single-axis and double-axis magnetic field sensors and preparation method thereof
  • Single-axis and double-axis magnetic field sensors and preparation method thereof
  • Single-axis and double-axis magnetic field sensors and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0108] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0109] figure 1A schematic structural diagram of a single-axis magnetic field sensor provided by some embodiments of the present invention is shown. Such as figure 1 As shown, the uniaxial magnetic field sensor includes: a substrate (not shown); a first full-bridge circuit located on the substrate, and the first full-bridge circuit includes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention provides a single-axis magnetic field sensor, a double-axis magnetic field sensor and a preparation method thereof. The single-axis magnetic field sensor comprises a first full-bridge circuit arranged on a substrate. The first full-bridge circuit comprises two first magnetic resistance modules and two second magnetic resistance modules. The two first magnetic resistance modules are located on a pair of opposite bridge arms of the first full-bridge circuit respectively. The two second magnetic resistance modules are located on the other pair of opposite bridge arms of the first full-bridge circuit respectively. The magnetization directions of the reference layers of the first magnetic resistance modules are perpendicular to the magnetization directions of thefree layers of the first magnetic resistance modules. The magnetization directions of the reference layers of the first magnetic resistance modules are the same. The magnetization directions of the reference layers of the second magnetic resistance modules are perpendicular to the magnetization directions of the free layers of the second magnetic resistance modules. The magnetization directions of the reference layers of the second magnetic resistance modules are the same. The included angle between the magnetization directions of the reference layers of the first magnetic resistance modulesand the magnetization directions of the reference layers of the second magnetic resistance modules is A and A is larger than 0 degree and smaller than 180 degrees. The technical scheme provided by theinvention has the advantages of simple process, low manufacturing cost and the like. The product yield can be improved, and the large-scale production requirement can be met.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a single-axis and double-axis magnetic field sensor and a preparation method thereof. Background technique [0002] At present, magnetic field sensors have been developed and applied in fields such as electronic compass. Generally, each sensing axis of a magnetic field sensor corresponds to two opposite pinning directions. [0003] In the prior art, since it is difficult to prepare two opposite pinning directions on one chip, the magnetic field sensor is usually obtained by splicing multiple chips. However, it is difficult to avoid mechanical errors when splicing multiple chips, which leads to low sensitivity and low yield of finished products, making it difficult to meet the needs of mass production. Contents of the invention [0004] Embodiments of the present invention provide a single-axis and double-axis magnetic field sensor and a preparation method thereof, aimi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/02
CPCG01R33/02
Inventor 冷群文曹志强闫韶华郭宗夏郑臻益赵巍胜
Owner QINGDAO RES INST OF BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products