Electronic grade hexachlorodisilane extraction and purification method and electronic grade hexachlorodisilane extraction and rectification system

Abstract

The invention discloses an electronic grade hexachlorodisilane extraction and purification method and an electronic grade hexachlorodisilane extraction and rectification system. Purified electronic grade hexachlorodisilane includes 3N, 4N and 5N grades; extraction, rectification and purification are carried out by a low-density extracting agent A and a high-density extracting agent B; specifically, the steps of removing low-boiling point impurities in hexachlorodisilane, removing low-density impurities in hexachlorodisilane, removing extracting agent A impurities in hexachlorodisilane, removing high-boiling point impurities in hexachlorodisilane, removing high-density impurities in hexachlorodisilane, removing extracting agent B impurities in hexachlorodisilane and outputting electronic grade hexachlorodisilane are conducted, and the extracting agents are rectified and recovered, so that the extracting agent A and the extracting agent B are obtained. Compared with the conventional rectification and adsorption process, the extraction and rectification method disclosed by the invention has the advantages that less energy for purification is consumed, the purification cost is only about 12 to 25 percent of the cost of the conventional rectification method, the quality grade of the product produced with the same energy consumption is high, less loss is caused in the process of purification, and the yield of the purified hexachlorodisilane product is higher.

Description

technical field [0001] The invention discloses a method for extracting and rectifying hexachlorodisilane, in particular a method for extracting and purifying electronic-grade hexachlorodisilane and an extracting and rectifying system. Background technique [0002] High-purity hexachlorodisilane, widely used in photovoltaic cells, semiconductor industry, flat panel display industry, large-scale electronic grade polysilicon production and other new material fields Silicon nitride film, and traditional dichlorodihydrogen silicon, silane vapor deposition method silicon film Compared with the hexachlorodisilane vapor deposition method, the deposition temperature is low, the deposition pressure is low, and the deposition efficiency is high, and the obtained silicon film has better insulation, corrosion resistance, and compatibility. At present, conventional rectification and physical adsorption technologies are used in China to remove part of titanium tetrachloride and other impur...

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Problems solved by technology

[0004] Aiming at the problems of difficult separation, high energy consumption, high cost, and insufficient purity in the existing hexachlorodisilane distillation and purification, the present invention proposes a method and system for extracting and rectifying hexachlorodisilane, aiming at providing production The specific technical scheme of the hexachlorodisilane product with a purity of 3N-5N is as follows:

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