Power semiconductor device and manufacturing method thereof

Abstract

The invention discloses a power semiconductor device and a manufacturing method thereof. The method comprises a step of forming a front side structure on a first surface of a semiconductor substrate,wherein the front side structure including a well region and an emitting region which is located in the well region, a step of thinning the semiconductor substrate from a second surface from the semiconductor substrate, wherein the second surface and the first surface are opposite each other, a step of carrying out laser processing on the second surface of the semiconductor substrate, and a step of forming a buffer region and a collector region on the second surface of the semiconductor substrate, wherein the collector region extends from the second surface to abut the buffer region. Accordingto the method, before forming the buffer region, the laser processing is carried out on the second surface of the semiconductor substrate, thus the oxygen content in the subsequently formed buffer region is reduced, the defect density is further reduced, thus the breakdown voltage is raised and the leakage current is reduced, and the device cost is reduced.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly, to power semiconductor devices and methods of manufacturing the same. Background technique [0002] Power semiconductor devices are widely used in electronic equipment, for example, as amplifying transistors in power amplifier circuits or as switching transistors in power supply circuits. Power semiconductor devices include bipolar transistors, metal oxide semiconductor transistors (MOSFETs), insulated gate bipolar transistors (IGBTs), and the like. [0003] The IGBT combines the high input impedance of a Metal Oxide Field Effect Transistor (MOSFET) with the current carrying capacity of a Bipolar Junction Transistor (BJT), which simplifies gate drive requirements while enhancing on-state performance. Its low saturation voltage, high current density, high blocking capability, and frequency range up to 100kHz allow it to quickly replace bipolar transistors in lower power appl...

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Problems solved by technology

The disadvantages of these methods are reduced production efficiency and higher device cost

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