High-density integration device and method for multi-source sensor
A technology of integrated devices and source sensors, applied in the direction of measuring devices, microstructure devices, processing microstructure devices, etc., can solve the problems of low power consumption and small volume, so as to improve utilization rate, improve production efficiency, and simplify the process of manufacturing Effect
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Embodiment 1
[0025] figure 1 It is an exploded view of a multi-source sensor high-density integrated device. The device is composed of six horizontal layers and two vertical function realization layers. The order of the six horizontal layers from top to bottom is polarization navigation realization layer 1 and X direction Inertial navigation layer 2-1, multi-source navigation fusion processing layer 3, energy supply layer 4, signal processing layer 5, image navigation and timing layer 6, the two vertical function realization layers are vertically arranged on the two sides of the six horizontal layers On the other hand, the two vertical function realization layers are respectively the Y-direction inertial navigation layer 2-2 and the Z-direction inertial navigation layer 2-3.
[0026] The horizontal layer is composed of a horizontal substrate and chips connected to the substrate, and the vertical function realization layer is composed of a vertical substrate and chips connected to the subst...
Embodiment 2
[0039] An integration method for a high-density integrated device of multi-source sensors, the device is composed of six horizontal layers and two vertical function realization layers, and the order of the six horizontal layers from top to bottom is polarization navigation realization layer, X Directional inertial navigation layer, multi-source navigation fusion processing layer, energy supply layer, signal processing layer, image navigation and timing layer, the two vertical function realization layers are set on both sides of the six horizontal layers, and the two vertical The function realization layers are the inertial navigation layer in the Y direction and the inertial navigation layer in the Z direction. Each horizontal layer of the device includes a horizontal substrate and a chip. On the silicon-based interposer, the chips are heterogeneously integrated on the silicon-based interposer in a 2.5-dimensional heterogeneous integration manner.
[0040] The integration sequ...
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