Carbon and silicon separation technology of nascent polysilicon and use device of technology

Abstract

The invention discloses a carbon and silicon separation technology of nascent polysilicon and a use device of the technology. A difference of reaction rates outside and inside a solution is achieved by a rotation method so as to separate the nascent polysilicon from a graphite fixture; a rotation separation structure comprising an electrochemical reaction tank, a mechanical rotation device, an ultrasonic vibration device, a corrosive liquid cleaning device and a power supply is designed in order to better achieve the technology. The technology achieves the difference of the reaction rates inside and outside the solution by rotating a carbon head material; the carbon head material of the polysilicon is separated; the corrosion of the polysilicon outside the solution is reduced at the same time; and the weight reduction of the polysilicon is decreased.

Description

technical field [0001] The invention relates to a raw polysilicon, carbon and silicon separation process and an application device thereof, which are suitable for recycling and utilizing the complete raw polysilicon and carbon heads in the semiconductor production process. Background technique [0002] At present, the production methods of polysilicon in the industry are mainly silane method, metallurgical method and Siemens method, etc. Among them, the Siemens method has been improved, and the third-generation Siemens method has realized closed-loop production, and has gradually become the mainstream preparation method for the production of high-purity polysilicon. In the production process, it is necessary to use a graphite chuck to connect the seed crystal, so that the primary polysilicon grows on the seed crystal. Inevitably, after the production is completed, there will be a certain amount of polysilicon and graphite that cannot be separated. This kind of polysilicon ma...

AI Technical Summary

Problems solved by technology

Although this method can separate polysilicon, it faces high energy consumption and high mechanical requirements during the heating process, and cannot be used in large-scale industries; in addition, the separated polysilicon cannot remove the silicon carbide film layer formed at the carbon-silicon contact interface. During the processing and utilization of the machine, the machine is damaged many times

However, the method of removing graphite by soaking in acid solution (CN200810163783.X, CN200810017582.9, CN201010561302.8, etc.) has serious environmental pollution, and the isolated polysilicon does not remove the silicon carbide layer

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