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Photonic integrated device and fabrication method thereof

A technology of photon integration and manufacturing method, which is applied to laser components, semiconductor laser optical devices, lasers, etc., to achieve the effects of facilitating mass production, improving luminous efficiency and output power, and simplifying the difficulty of the process

Active Publication Date: 2018-07-03
QINGDAO YICHENLEISHUO TECH CO LTD QINGDAO CITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above-mentioned problems in the prior art, the present invention provides a photonic integrated device and its manufacturing method. The photonic integrated device uses semiconductor light-emitting units located on both sides to pump the light-emitting two-dimensional material between them, which can not only avoid light-emitting Difficulty in making two-dimensional materials in existing p-n junction devices and low luminous efficiency, and photonic integrated devices with different wavelength bands can also be obtained

Method used

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  • Photonic integrated device and fabrication method thereof
  • Photonic integrated device and fabrication method thereof
  • Photonic integrated device and fabrication method thereof

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Embodiment 1

[0045] figure 1 It is a schematic structural diagram of a photonic integrated device according to Embodiment 1 of the present invention; figure 2 yes figure 1 A schematic cross-sectional view of the photonic integrated device along the A-A direction; image 3 yes figure 1 Schematic cross-sectional view of the photonic integrated device along the B-B direction.

[0046] refer to Figure 1-Figure 3 , the present embodiment provides a photonic integrated device, which includes a substrate 1, a two-dimensional material unit 2 disposed on the substrate 1, and semiconductor light emitting units 3 located on both sides of the two-dimensional material unit 2; the semiconductor light emitting unit 3 A positive electrode 41 is provided on the top layer, and a negative electrode 42 is also provided on the substrate 1 .

[0047] The two-dimensional material unit 2 is provided with a light-emitting two-dimensional material 21 whose light-emitting band is longer than that of the semic...

Embodiment 2

[0060] In the description of Embodiment 2, the similarities with Embodiment 1 will not be repeated here, and only the differences with Embodiment 1 will be described. refer to Figure 4 and Figure 5 The difference between embodiment 2 and embodiment 1 is that part of the lower structure layer 31 in the plurality of semiconductor light emitting units 3 is extended and connected as a whole, and at the same time, the extension part 221 covers the part between the plurality of semiconductor light emitting units 3 on the lower structural layer 31.

[0061] In this embodiment, the part of the lower structure layer 31 that is extended and connected as a whole specifically refers to the buffer layer, the lower cladding layer, and a part of the lower waveguide layer adjacent to the lower cladding layer.

Embodiment 3

[0063] In the description of Embodiment 3, the similarities with Embodiment 1 will not be repeated here, and only the differences with Embodiment 1 will be described. refer to Figure 6 and Figure 7 The difference between embodiment 3 and embodiment 1 is that the lower structure layer 31, the active layer 32 and part of the upper structure layer 33 in the plurality of semiconductor light-emitting units 3 are simultaneously extended and connected as a whole, and the extension part 221 covers the plurality of On the part of the upper structure layer 33 between the two semiconductor light emitting units 3; at the same time, an angle not equal to 90° is also formed between the semiconductor light emitting unit 3 and the two-dimensional material unit 2; thus, the semiconductor light emitting unit 3 is specifically superradiant glow tube.

[0064] In this embodiment, the part of the upper structure layer 33 that is extended and connected as a whole specifically refers to the part...

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Abstract

The invention provides a photonic integrated device. The photonic integrated device comprises a substrate; a two-dimensional material unit and semiconductor light emitting units located at two sides of the two-dimensional material unit are arranged on the substrate; a light emitting two-dimensional material whose light emitting band is longer than that of the semiconductor light emitting unit is arranged in the two-dimensional material unit; and the semiconductor light emitting unit provides a pumping light source for the two-dimensional material unit to pump the light emitting two-dimensionalmaterial to emit light. According to the photonic integrated device, through changing the layer number or the kinds of the light emitting two-dimensional material, different light emitting bands canbe acquired; and besides, as an optical pumping light emitting mode is adopted, forming of a p-n junction is not needed, and in comparison with an electrical pumping light emitting mode of fabricatinga p-n junction based on the light emitting two-dimensional material in the prior art, the process difficulty is simplified. The invention also provides a fabrication method for the above photonic integrated device. The fabrication method can realize process standardization easily and is compatible with the existing semiconductor device fabrication process, the fabrication cost is reduced, and batch production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic integration, and in particular relates to a photonic integrated device and a manufacturing method thereof. Background technique [0002] Two-dimensional materials with atomic thickness, such as graphene, boron nitride, two-dimensional transition metal sulfides, black phosphorus, etc., have attracted widespread attention for their excellent physical and chemical properties. Among them, graphene has many excellent properties, such as high electron mobility, high thermal conductivity, room temperature Hall effect, etc. However, the zero bandgap of graphene makes it have a small on-off current ratio, which limits its application in practical devices. And with MoS 2 Although the carrier mobility of the single-layer structure of the representative two-dimensional transition metal sulfide is lower than that of graphene, it has a direct bandgap of about 1.8eV and a relatively high s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15
CPCH01L27/15H01L27/153H01L33/505H01S5/026H01S5/1085H01S5/22H01S5/4031H01S5/4056H01S2301/176H01S5/04257H01S5/0087H01L27/156H01L33/0045H01L33/0062H01L33/06H01L33/12H01L33/30H01L33/38H01L33/44H01L33/502H01L33/58H01L2933/0016H01L2933/0025H01L2933/0041H01L2933/0058H01S5/005H01S5/0206H01S5/028H01S5/0421H01S5/3412H01S5/343H01S5/4025
Inventor 张子旸陈红梅黄源清刘清路
Owner QINGDAO YICHENLEISHUO TECH CO LTD QINGDAO CITY
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