Preparation method of electron-doped bilayer graphene

A double-layer graphene and electronic doping technology, applied in the field of graphene, can solve problems such as the difficulty of preparing double-layer graphene, and achieve the effects of low cost, high preparation efficiency, and simple equipment and process

Active Publication Date: 2021-04-23
KUNMING INST OF PHYSICS
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Problems solved by technology

[0004] What the present invention is to solve is the existing difficult problem of preparing double-layer graphene, and provides a method for preparing electron-doped double-layer graphene by thermally evaporating melamine molecules on the surface of double-layer graphene to modulate the electrical properties of graphene method

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  • Preparation method of electron-doped bilayer graphene
  • Preparation method of electron-doped bilayer graphene
  • Preparation method of electron-doped bilayer graphene

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Embodiment 1

[0017] Example 1: A method for preparing electron-doped double-layer graphene, preparing large-area double-layer graphene by chemical vapor deposition, and then using thermal evaporation technology to evaporate a layer of melamine molecules on the surface of double-layer graphene to modulate graphene Electrical properties, the specific preparation steps are as follows:

[0018] 1) Prepare double-layer graphene on copper foil by chemical vapor deposition: put the copper foil substrate into the tube furnace, and then evacuate to below 1Pa; pass the mixed gas of hydrogen and argon into the tube furnace at 60 sccm In the furnace, the temperature was raised to 1000°C within 120 minutes; then methane was introduced at 20 sccm for 60 minutes, and the pressure in the tube furnace was kept at 1500 Pa at this time; after cooling down to room temperature, the mixed gas of hydrogen and argon was turned off, and the growth Bilayer graphene samples on the surface of copper foil;

[0019] 2...

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Abstract

A method for preparing electron-doped double-layer graphene, relating to graphene, especially a method for preparing electron-doped double-layer graphene by thermally evaporating melamine molecules on the surface of double-layer graphene to modulate the electrical properties of graphene . The preparation method of electron-doped double-layer graphene of the present invention is characterized in that the preparation method prepares large-area double-layer graphene by chemical vapor deposition, and then evaporates a layer of melamine molecules on the surface of double-layer graphene by thermal evaporation technology. Modulation of graphene electrical properties. The biggest difference between this technology and the preparation of single-layer graphene is that the amount of mixed gas of hydrogen and argon is increased and the preparation time is prolonged. The thickness of the film covering the surface of double-layer graphene in step 3) can be controlled by adjusting the amount of melamine The doping of melamine enables the conductivity type of graphene to be modulated from strong p-type to weak p-type. n Type doping provides a feasible solution.

Description

technical field [0001] The invention relates to graphene, in particular to a method for preparing electron-doped double-layer graphene by thermally evaporating melamine molecules on the surface of the double-layer graphene to modulate the electrical properties of the graphene. Background technique [0002] Graphene is a carbon atom sp 2 Orbital hybridization forms a two-dimensional material with a honeycomb structure. Since Konstantin Novoselov and Andre Geim discovered graphene and prepared the first graphene field-effect transistor in 2004, due to its high carrier mobility and wide spectral absorption However, due to the zero band gap and weak light absorption (2.3%) of the intrinsic single-layer graphene, the graphene-based photodetector has a small switching ratio and response The low efficiency limits its application in the field of optoelectronics. Opening the band gap of graphene to increase the switching ratio is very important for the application of graphene in t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
CPCC01B2204/04C01B2204/22
Inventor 唐利斌姬荣斌项金钟胡松文赵梓妤康蓉秦强韩福忠
Owner KUNMING INST OF PHYSICS
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