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A kind of graphene carbon nanotube composite film and its preparation method and application

A nanotube composite, graphene carbon technology, applied in the field of electronics, can solve problems such as poor heat dissipation effect of power devices, achieve good contact and adhesion, high heat exchange performance, and reduce device thermal resistance and junction temperature effects.

Active Publication Date: 2020-08-07
SHANGHAI UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a graphene carbon nanotube composite film and its preparation method and application, for solving the problem of poor heat dissipation effect of power devices in the prior art

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  • A kind of graphene carbon nanotube composite film and its preparation method and application
  • A kind of graphene carbon nanotube composite film and its preparation method and application
  • A kind of graphene carbon nanotube composite film and its preparation method and application

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Embodiment Construction

[0040] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] see Figure 1 to Figure 7 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a graphene carbon nano tube composite film and a preparation method and application thereof. The preparation method comprises the following steps that S1, a substrate is provided, and the whole or at least one face of the substrate is made of a graphene catalyst; S2, electroplating is conducted, thus, a carbon nano tube is attached to the surface of the substrate, and the graphene catalyst is not fully covered with the carbon nano tube; and S3, graphene continues to grow on the face, containing the graphene catalyst, of the substrate through a chemical gas phase method,and the graphene carbon nano tube composite film is obtained. The graphene carbon nano tube composite film and the preparation method and application thereof have the characteristic of being simple intechnology, the graphene carbon nano tube composite film obtained through the non-transferring self growing technology is good in quality, and contact and attaching between the composite film and thecatalyzing substrate are good.

Description

technical field [0001] The invention belongs to the field of electronics, and relates to a graphene carbon nanotube composite film and a preparation method and application thereof. Background technique [0002] With the increase of main switching frequency, conversion power supply voltage and power in electronic circuits, higher requirements are put forward for the rectifier switching diodes that play a controlling role. Hybrid Schottky diodes (MPS) have the characteristics of high blocking voltage, low leakage current, faster switching speed, larger conduction current, and smaller conduction voltage. For MPS with vertical structure, the copper base in the device package structure not only supports the chip, but also is one of the working electrodes of the chip. With the rapid development of the third-generation semiconductor technology, the power density of MPS is increasing, generating more and more heat, and the chip junction temperature rises rapidly. When the temperatu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D9/04C23C16/26C23C28/04H01L23/492H01L23/373H01L23/42
CPCC23C16/26C23C28/04C25D9/04H01L23/373H01L23/42H01L23/4928
Inventor 杨连乔陈章福徐小雪张建华殷录桥吴行阳廖威李起鸣特洛伊·乔纳森·贝克
Owner SHANGHAI UNIV
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