Vertical double diffusion field effect transistor and manufacture method thereof

Abstract

A vertical double diffusion field effect transistor includes an N-type substrate, an N-type epitaxial region; a first P-type body region and a second P-type body region formed on the surface of the N-type epitaxial region; a first N-type injection region disposed on the surface of the first P-type body region; a second N-type injection region disposed on the surface of the second P-type body region; a third N-type injection region disposed on the surface of the N-type epitaxial region; a first P-type injection region penetrating through the first N-type injection region and extending to the first P-type body region; a second P-type injection region penetrating through the second N-type injection region and extending to the second P-type body region; gate oxide layers and polycrystalline silicon layers formed on the N-type epitaxial region, the first and the second P-type body regions, the first and the second N-type injection regions; medium layers formed on the polycrystalline siliconlayers, the first, the second and the third N-type injection regions; a first through hole penetrating through the medium layers and corresponding to the first N-type injection region and the first P-type injection region; and a second through hole penetrating through the medium layer and corresponding to the second N-type injection region and the second P-type injection region.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip fabrication, in particular to a vertical double diffused field effect transistor (VDMOS) and a fabrication method thereof. 【Background technique】 [0002] The drain and source poles of the vertical double diffused field effect transistor (VDMOS) are respectively on both sides of the device, so that the current flows vertically inside the device, increasing the current density, improving the rated current, and the on-resistance per unit area is also small, which is a A very versatile power device. The most important performance parameter of a vertical double diffused field effect transistor (VDMOS) is the operating loss, which can be divided into three parts: conduction loss, cut-off loss and switching loss. The conduction loss is determined by the conduction resistance, the cut-off loss is affected by the reverse leakage current, and the switching loss refers to the loss caused by th...

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Problems solved by technology

However, N-type implantation is a full-chip implantation, and non-JFET regions will also be implanted, which will affect device performance.

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