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Grinding method and grinding device

A grinding method and a technology of a grinding head, which are applied in the direction of grinding devices, grinding machine tools, and parts of grinding machine tools, can solve problems such as unevenness and inability to eliminate film thickness, and achieve the goal of reducing film thickness differences and eliminating film thickness unevenness Effect

Active Publication Date: 2020-01-24
EBARA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional CMP technology cannot eliminate such uneven film thickness along the wafer circumference

Method used

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  • Grinding method and grinding device
  • Grinding method and grinding device
  • Grinding method and grinding device

Examples

Experimental program
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Effect test

Embodiment Construction

[0078] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0079] figure 1 It is a perspective view showing an embodiment of a CMP (Chemical Mechanical Polishing) apparatus which is a main polishing apparatus for chemically mechanically polishing the entire surface of a substrate such as a wafer. The CMP apparatus 100 as a main polishing apparatus includes: a polishing head (substrate holding device) 1 that holds and rotates a wafer W as an example of a substrate; a polishing table 3 that supports a polishing pad 2; and a slurry supply that supplies slurry to the polishing pad 2. Nozzle 5. The upper surface of the polishing pad 2 constitutes a polishing surface 2a for polishing the wafer W. As shown in FIG.

[0080] The polishing head 1 is configured to hold the wafer W on its lower surface by vacuum suction. The polishing head 1 and the polishing table 3 rotate in the same direction as indicated by arrows, and the polishing...

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Abstract

The invention relates to a method and a device for grinding the surface of a substrate with uneven film thickness along the circumferential direction of the substrate. The polishing method is to obtain the film thickness distribution in the circumferential direction of the substrate (W), determine the first region with the largest or smallest film thickness according to the film thickness distribution, and rotate the polishing table (3) holding the polishing pad (2), The surface of the substrate (W) is pressed against the polishing pad (2) while the substrate is rotated by the polishing head (1), and the first region is polished with a removal rate different from that of the second region on the surface of the substrate (W).

Description

technical field [0001] The invention relates to a grinding method and a grinding device for grinding the surface of a substrate such as a wafer, in particular to a method and a device for grinding a substrate surface with uneven film thickness along the circumferential direction of the substrate. Background technique [0002] Various films are formed on wafers in the manufacture of semiconductor elements. After the film forming process, the wafer is ground to remove unnecessary portions of the film and surface irregularities. Chemical mechanical polishing (CMP) is a representative technique of wafer polishing. This CMP is performed by supplying slurry on the polishing surface, while bringing the wafer into sliding contact with the polishing surface. The film formed on the wafer is polished by the combined effect of the mechanical action of the abrasive grains contained in the slurry and the chemical action of the chemical components of the slurry. [0003] prior art liter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/005B24B37/30B24B37/34B24B49/04H01L21/304
CPCH01L22/12H01L22/20B24B37/013B24B37/32B24B49/105B24B49/12B24B37/042B24B37/107B24B37/005B24B37/30B24B37/34B24B49/04H01L21/304H01L21/30625H01L22/26
Inventor 吉田博
Owner EBARA CORP
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