Dry film resist with high adhesive power and high developing speed

Abstract

The invention discloses a dry film resist with high adhesive power and high developing speed. The dry film resist comprises a solvent, and anti-etching core components with the concentration of 30-50wt% and dissolved in the solvent, wherein the anti-etching core components comprise alkali soluble resin, an olefinic photopolymerization unsaturated monomer, a photopolymerization initator, a coloringagent and an additive; and the olefinic photopolymerization unsaturated monomer comprises a cyclodextrin-group-comprising olefinic unsaturated double-bond compound, a bisphenol A structure-comprisingacrylic compound, polyethylene glycol chain section-comprising dimethacrylate, trimethylolpropane triacrylate and a phosphate group-comprising hydroxyethyl acrylate compound. The light-sensitive dryfilm resist prepared in the invention has the characteristics of high adhesive power and high developing speed; and by virtue of the dry film resist, the phenomena of diffusion plating and short circuit in the electroplating process are effectively reduced, and efficiency and yield of the production process of a circuit board are greatly improved.

Description

Technical field [0001] The invention relates to a resist, in particular to a dry film resist with high adhesion and rapid development. Background technique [0002] In recent years, with the rapid development of printed circuits toward integration, intelligence, miniaturization, and multifunction, there is an increasing demand for high-density, narrow-wiring integrated circuits in practical applications. This puts forward higher requirements for the fine resolution, excellent adhesion, and higher development efficiency of the photosensitive dry film. [0003] In the conventional printed circuit board manufacturing process, the process of dispersing or dissolving the photosensitive resin composition of the unexposed part from the circuit board by the alkaline developer is called the developing process. Under normal circumstances, too long development time may lead to overdevelopment. This is because the resist pattern has been in contact with the developer for too long, which weake...

AI Technical Summary

Problems solved by technology

As mentioned in the patent document US 4,293,635, by reducing the amount of monomer or plasticizer in the resist and increasing the molecular weight of the resin in the resist, the cold flow tendency can be reduced and the storage time can be prolonged, but this will reduce the Photopolymerization speed, prolong exposure time, and increase development time, reduce production efficiency

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