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Material for preparation of zinc oxide piezoresistor

A piezoresistor, zinc oxide technology, applied in the direction of piezoresistor core, piezoresistor, etc., can solve the problems that cannot meet the requirements of manufacturing light and thin resistors, and achieve good application prospects, low leakage current, strong resistance to large The effect of current capacity

Inactive Publication Date: 2018-04-20
SICHUAN QIXING ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a material used for the preparation of zinc oxide varistors to solve the problem that the existing zinc oxide varistors cannot meet the requirements for manufacturing light and thin resistors

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A material for the preparation of zinc oxide varistors, consisting of the following materials in parts by weight: 93 parts of zinc oxide; 0.05 parts of tin oxide; 1.5 parts of bismuth trioxide; 46 parts of yttrium oxide; 46 parts of ytterbium oxide; silicon dioxide 9.

Embodiment 2

[0032] A material for preparing a zinc oxide varistor, consisting of the following materials in parts by weight: 96 parts of zinc oxide; 1.3 parts of tin oxide;

[0033] 1.8 parts of bismuth trioxide; 49 parts of yttrium oxide; 49 parts of ytterbium oxide; 12 parts of silicon dioxide; 0.08 parts of boric acid.

Embodiment 3

[0035] A material for the preparation of zinc oxide varistors, consisting of the following materials in parts by weight: 95 parts of zinc oxide; 1.2 parts of tin oxide; 1.7 parts of bismuth trioxide; 47 parts of yttrium oxide; 48 parts of ytterbium oxide; 10 parts of silicon oxide; 0.06 parts of boric acid.

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PUM

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Abstract

The invention discloses a material for preparation of a zinc oxide piezoresistor. The material comprises, by weight, 93 to 96 parts of zinc oxide, 0.05 to 1.3 parts of tin oxide, 1.5 to 1.8 parts of bismuth trioxide, 46 to 49 parts of yttrium oxide, 46 to 49 parts of ytterbium oxide and 9 to 12 parts of silicon dioxide. According to the invention, yttrium ions and ytterbium ions are introduced andbismuth trioxide is used, so the performance of the zinc oxide pressure-sensitive material is improved.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to a material used for the preparation of zinc oxide piezoresistors. Background technique [0002] The varistor is a voltage limiting protection device. Utilizing the nonlinear characteristics of the varistor, when an overvoltage occurs between the two poles of the varistor, the varistor can clamp the voltage to a relatively fixed voltage value, thereby realizing the protection of the subsequent circuit. In recent years, with the rapid development of information technology, the miniaturization, multi-function, and high stability of electronic equipment have become an inevitable trend of development, and the varistor as a protective semiconductor element is also correspondingly moving towards thinner, lower voltage, and higher reliability. sexual development. [0003] Zinc oxide varistors have been widely used because of their simple process, low cost, and convenient use. But now...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453H01C7/112
CPCC04B35/453C04B2235/3224C04B2235/3225C04B2235/3293C04B2235/3298C04B2235/3409C04B2235/3418H01C7/112
Inventor 江明泓
Owner SICHUAN QIXING ELECTRONICS
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