Ultraviolet LED and preparation method

Abstract

The invention relates to an ultraviolet LED and a preparation method. The ultraviolet LED includes a light-emitting layer, a P-type layer on a side of the light-emitting layer, and an N-type layer onthe other side of the light-emitting layer. The P-type layer is provided with a plurality of through holes at intervals. The through holes penetrate through the light-emitting layer from the P-type layer are provided therein with N electrodes. One end of each N electrode extends out of the P-type layer to form an N-end electrode. The other end of each N electrode is electrically connected to the N-type layer. The outer peripheral surfaces of the N electrodes are covered with the first insulating layers. The N electrodes are insulated from the P-type layer and the light-emitting layer by firstinsulating layers. Since the N electrodes are disposed in the through holes, the N-end electrodes and the electrode end of the P-type layer are on the same side, thereby facilitating wire connection and light propagation. Because of the first insulating layers and the light reflecting N electrodes, the light of the light-emitting layer is reflected by the N electrodes so as to achieve in-plane light scattering to the utmost extent and improve light extraction efficiency.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an ultraviolet light-emitting diode and a preparation method. Background technique [0002] Optoelectronic semiconductor devices play an increasingly important role in our life and scientific research. In recent years, nitride semiconductor light-emitting diodes (LEDs) based on gallium nitride (GaN) have been used more and more in practice, and deep ultraviolet C-band (UVC) LEDs have also been used as excitation Light source to realize special light source. As for the research and application of LED, people pay most attention to the internal quantum efficiency and external quantum efficiency of LED. Although the current internal quantum efficiency of UVC-based LEDs has reached 60%, since UVC uses AlGaN materials with high Al composition (such as figure 1 ), affected by optical polarization, only no more than 12% of the light can exit the LED and enter the air. T...

AI Technical Summary

Problems solved by technology

Judging from the current research situation, using various nanotechnology to change the roughness of the GaN surface is a common method to improve the light extraction efficiency of the GaN surface, but the existing methods require relatively complicated operation procedures and technical equipment, which belongs to the surface light propagation. Light scattering, and its effect on the UVC band is limited. Although scholars from various countries have carried out a lot of research on the surface nanostructure of GaN and the enhancement of light extraction efficiency with the help of nanostructures, at present, a simple process, low damage, and Three-dimensional light-scattering structure for efficient light emission in the UVC band

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