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Electrostatic chuck and reaction chamber

A technology of electrostatic chuck and reaction chamber, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve problems such as processing difficulties, achieve the effects of reducing processing difficulty, solving thermal expansion and heat insulation problems, and reducing processing difficulty

Active Publication Date: 2018-09-18
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] One, because the gap G between the chuck upper part 550A and the chuck lower part 550B is relatively small, when the raised part 503 is respectively connected with the chuck upper part 550A and the chuck lower part 550B through diffusion connection, the processing is very difficult

Method used

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  • Electrostatic chuck and reaction chamber
  • Electrostatic chuck and reaction chamber
  • Electrostatic chuck and reaction chamber

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Embodiment Construction

[0027] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] image 3 A cross-sectional view of an electrostatic chuck provided by an embodiment of the present invention. see image 3 , the electrostatic chuck includes: an electrostatic chuck assembly, a cooling element 14 , a supporting insulating element 13 and a sealing insulating element 12 . Wherein, the electrostatic chuck assembly is located above the cooling element 14 . In this embodiment, the electrostatic chuck assembly includes: a main structure 11 , an electrode 9 inside the main structure 11 and a heating component 10 . The material of the main structure 11 is ceramics, preferably alumina ceramics or aluminum nitride ceramics. Electrodes 9 and heating elements 10 are produced by printing. Preferably, the material of the electrode 9 is Mo o...

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PUM

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Abstract

The invention provides a static chuck and a reaction cavity. The static chuck comprises a static chuck assembly, a cooling part, a supporting heat-insulation part and a sealing heat-insulation part, wherein the static chuck assembly is located above the cooling part, and the supporting heat-insulation part is arranged between the static chuck assembly and the cooling part and used for supporting the static chuck assembly. The sealing heat-insulation part is of a corrugated annular thin-wall structure, is arranged between the static chuck assembly and the cooling part and is wound around the outer side of the supporting heat-insulation part. The sealing heat-insulation part is connected with the static chuck assembly and the cooling part respectively in a sealing mode, a separation space is formed between the sealing heat-insulation part and the supporting heat-insulation part and is used for leading out a lead inside the static chuck assembly. The problems of thermal expansion and heat insulation at a high-temperature stage can be effectively solved, meanwhile the machining difficulty of the static chuck is reduced, and the lead inside the static chuck can be conveniently led out.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to an electrostatic chuck and a reaction chamber. Background technique [0002] In the field of semiconductor processing, generally in a vacuum reaction chamber, reactive materials are formed on the wafer surface by etching (Etch) process or chemical vapor deposition (CVD) process. During this process, the wafer can be fixed on a specific position in the vacuum reaction chamber by a mechanical clamping device or an electrostatic chuck (ESC), and the process gas is transported into the vacuum reaction chamber through the pipeline, while the vacuum reaction chamber A radio frequency (RF) field in the chamber energizes the process gas into a plasma state. In the semiconductor production process, chucks are used to fix and support wafers to prevent wafer movement or misalignment during processing. Chucks may include mechanical chucks, vacuum chucks, or electrostatic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683
CPCH01L21/6831H01L21/6833H01L2221/68313
Inventor 聂淼
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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