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Crystal silicon polishing additive and use method thereof for crystal silicon polishing

A technology of crystalline silicon and additives, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of poor control of the reaction process, high cost of polishing liquid, environmental pollution, etc., and achieve great practical value, Promote polishing effect and reduce production cost

Pending Publication Date: 2018-04-13
绍兴拓邦新能源股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the following three methods are mainly used in the production and polishing steps of industrial crystalline silicon cells: 1. Nitric acid and hydrofluoric acid polishing. This method has low polishing reflectivity, high production cost, and serious environmental pollution.
2. Tetramethylammonium hydroxide polishing, this method has higher reflectivity, but the cost of polishing liquid is higher, the environmental pollution is more serious, and the treatment cost is higher
3. Concentrated alkali polishing, using high-concentration potassium hydroxide and sodium hydroxide inorganic alkali polishing, the process of this method is unstable, the reaction process is not easy to control, and the alkali will corrode the silicon oxide on the front of the silicon wafer, thereby destroying the front PN junction , causing the battery to fail

Method used

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  • Crystal silicon polishing additive and use method thereof for crystal silicon polishing
  • Crystal silicon polishing additive and use method thereof for crystal silicon polishing
  • Crystal silicon polishing additive and use method thereof for crystal silicon polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] To prepare a crystalline silicon polishing additive, mix and dissolve 10 g of sodium citrate, 10 g of palmitic acid, 2 g of cetyltrimethylamine oxide, and 1.5 ml of Tween into 1 L of deionized water to obtain a crystalline silicon polishing additive. Add 5000g of sodium hydroxide and 1L of amorphous silicon polishing additive into 160L of deionized water to obtain a polishing solution. The polishing solution was heated up to 65°C, and then the diffused PSG-removed silicon wafer was immersed in the polishing solution for polishing. The polishing time was 200s. The obtained silicon wafer was detected by scanning electron microscopy with a lattice base size of 10-30 μm and no other shapes. appearance impurities.

Embodiment 2

[0022] To prepare a crystalline silicon polishing additive, mix and dissolve 15 g of sodium citrate, 15 g of palmitic acid, 3 g of cetyltrimethylamine oxide, and 2.25 ml of Tween into 1.5 L of deionized water to obtain a crystalline silicon polishing additive. Add 4000g of sodium hydroxide and 1.5L of crystalline silicon polishing additive into 180L of deionized water to obtain a polishing solution. The polishing solution was heated up to 75°C, and then the diffused PSG-removed silicon wafer was immersed in the polishing solution and polished for 120s. The obtained silicon wafer was detected by a scanning electron microscope with a lattice base size of 10-30 μm and no other shapes. appearance impurities.

Embodiment 3

[0024] On the basis of embodiment 1, change sodium hydroxide to be 3000g.

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Abstract

The invention relates to a crystal silicon polishing additive and a use method thereof for crystal silicon polishing and belongs to the technical field of production of solar cells. The crystal silicon polishing additive comprises the following raw material components in percentage by weight: 0.01-3 percent of sodium citrate, 0.01-3 percent of cetylic acid, 0.001-1 percent of hexadecyl trimethylamine and 0.1-2 percent of Tween and the balance of deionized water; when the additive is in use, sodium oxide or potassium hydroxide is required to be added to prepare polishing liquid; and the volumepercent of the additive to an alkaline solution is (1.2:100)-(5:100), the temperature of the polishing liquid is 55-80 DEG C, and the crystal silicon polishing time is 120-300 s. The crystal silicon polishing additive and the use method thereof, provided by the invention, have the beneficial effects that the reaction speed is controlled by utilizing the cetylic acid, the alkali concentration is increased simultaneously, and lattice bases with uniform sizes are obtained; and the sodium citrate has a metal complexing effect, has a cleaning effect on a silicon chip and is low in cost.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a crystalline silicon polishing additive and its use method for crystalline silicon polishing. Background technique [0002] In the preparation process of crystalline silicon solar cells, the back polishing of silicon wafers is to improve the performance and efficiency of solar cells, and it is necessary to make a relatively flat back, thereby improving the conversion efficiency of solar cells. At present, the following three methods are mainly used in the production and polishing steps of industrial crystalline silicon cells: 1. Nitric acid and hydrofluoric acid polishing. This method has low polishing reflectivity, high production cost, and serious environmental pollution. 2. Tetramethylammonium hydroxide polishing, this type of method has a higher reflectivity, but the cost of polishing liquid is higher, the environmental pollution is more serious, and the treatm...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 李一鸣张益荣张震华桑丹义邓雨微吴冰
Owner 绍兴拓邦新能源股份有限公司
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