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Device and method capable of increasing synthesizing stability of cadmium zinc telluride polycrystals

A cadmium telluride and stability technology is applied in the field of devices for improving the synthesis stability of cadmium zinc telluride polycrystalline, which can solve problems such as quartz tube explosion and tube cracking accident, achieve better synthesis, reduce raw material loss and equipment damage, and avoid Effects of phenomena such as columns

Active Publication Date: 2018-04-13
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a device and method for improving the stability of CdZnTe polycrystalline synthesis in view of the problem that quartz tube explosions are prone to occur during the synthesis process of CdZnTe, resulting in tube cracking accidents

Method used

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  • Device and method capable of increasing synthesizing stability of cadmium zinc telluride polycrystals
  • Device and method capable of increasing synthesizing stability of cadmium zinc telluride polycrystals

Examples

Experimental program
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Embodiment 1

[0073] 1) Decompose acetone at 1000°C on the inner surface of a clean quartz crucible, and coat it with a uniform and firm carbon film;

[0074] 2) Calculate the required high-purity Te, Cd, and Zn raw materials according to the size and composition requirements of the required synthetic ingots. First, put the Te raw materials into the bottom of the quartz crucible. Te blocks of different sizes can be arranged as closely as possible to reduce the gap , then load the Cd raw material in the same way, and finally fill the Zn raw material above the Cd raw material or in the gap;

[0075] 3) Connect the quartz crucible filled with raw materials to the molecular pump group through the flange, put the lower end of the quartz crucible into the degassing furnace, and turn on the vacuum pump to evacuate. When the vacuum degree reaches 1×10 -4 When Pa is below, the degassing furnace starts to heat up. The temperature of the degassing furnace is 200°C. When the vacuum degree reaches 1×10 ...

Embodiment 2

[0084] 1) Decompose acetone at 1000°C on the inner surface of a clean quartz crucible and coat it with a uniform and firm carbon film;

[0085] 2) Calculate the required high-purity Te, Cd, and Zn raw materials according to the size and composition requirements of the required synthetic ingots. First, put the Te raw materials into the bottom of the quartz crucible. Te blocks of different sizes can be arranged as closely as possible to reduce the gap , then load the Cd raw material in the same way, and finally fill the Zn raw material above the Cd raw material or in the gap;

[0086] 3) Connect the quartz crucible filled with raw materials to the molecular pump group through the flange, put the lower end of the quartz crucible into the degassing furnace, and turn on the vacuum pump to evacuate. When the vacuum degree reaches 1×10 -4 When Pa is below, the degassing furnace starts to heat up. The temperature of the degassing furnace is 250°C. When the vacuum degree reaches 1×10 ...

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Abstract

The invention discloses a device and method capable of increasing the synthesizing stability of cadmium zinc telluride polycrystals and aims to solve the problem that quartz tube explosion occurs easily during the synthesizing of cadmium zinc telluride, and the tube cracking accident is caused. The device and method is characterized in that protective gas is filled into a pressure-maintaining inner container, the internal and external pressure difference of a quartz crucible is balanced or lowered by regulating the gas filling pressure in the pressure-maintaining inner container, raw materialreaction rate is controlled by crystal material distribution, temperature gradient setting or furnace tube ascending and descending, and crystal growth is performed through the temperature gradient setting and the furnace tube ascending and descending. The device and method has the advantages that crucible explosion can be avoided effectively, reaction conditions are mild, phenomena such as tube cracking are avoided effectively, corresponding preparation requirements can be satisfied, and the device and method is promising in application prospect.

Description

technical field [0001] The invention relates to the field of crystal preparation, in particular to a device and method for improving the synthesis stability of CdZnTe polycrystal. The present invention can effectively reduce the pressure difference borne by the quartz crucible by applying a balanced air pressure outside the crucible, and effectively control the reaction conditions to effectively suppress the violent reaction between raw materials, so as to avoid the cadmium zinc telluride polycrystalline material synthesis process cracking phenomenon. Background technique [0002] Cadmium zinc telluride (Cd1-xZnxTe) crystal is a superior x-ray and gamma-ray detection material, which has a high absorption coefficient for rays, and can use a smaller detection unit while ensuring detection sensitivity; at the same time, at close to room temperature Good detection ability can still be achieved in the case of high-purity germanium and silicon detectors. Since it does not need to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B28/04
CPCC30B28/04C30B29/48
Inventor 杨瑞龙朱康伟刘毅王晓芳胡殷张鹏程
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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