A full bridge circuit and fast recovery diode

Abstract

The invention relates to a full-bridge circuit and a fast recovery diode, which solves the technical problem of bearing a small driving current. By adopting the full-bridge circuit, the ceramic substrate is provided with a copper-clad microstrip and a chip, and a copper-clad microstrip There is a copper bridge for connection between the strip and the chip. One end of the copper bridge is connected to the chip, and the other end is connected to the copper clad microstrip. The contact between the two ends of the copper bridge and the chip or the copper clad microstrip is the lead foot mechanism; the copper connecting bridge is not in contact with the corresponding chip and is divided into a suspension mechanism, and the technical solution of the hollow space between the suspension mechanism and the ceramic substrate solves this problem better and can be used in semiconductor module packaging.

Description

technical field [0001] The invention relates to the field of semiconductor module packaging, in particular to a full bridge circuit and a fast recovery diode. Background technique [0002] Fast recovery diode (FRD for short) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in electronic circuits such as switching power supplies, PWM pulse width modulators, and frequency converters. Freewheeling diodes or damping diodes are used. The internal structure of the fast recovery diode is different from the ordinary PN junction diode. It belongs to the PIN junction diode, that is, the base region I is added between the P-type silicon material and the N-type silicon material to form a PIN silicon chip. Because the base region is very thin and the reverse recovery charge is very small, the reverse recovery time of the fast recovery diode is short, the forward voltage drop is low, and the reverse breakdown voltage is high....

AI Technical Summary

Problems solved by technology

[0003] The chip in the existing fast recovery diode package is connected by aluminum wire bonding. In the aluminum wire connection, the thickness of the aluminum wire has a limit on the current. When driving a high current, a lot of aluminum wires are needed to connect. The manufacturing process becomes complicated; the material of the aluminum wire is soft, and it is easy to deform during the manufacturing process, which may cause a short circuit; when working under high current, a large amount of heat is generated, which cannot be conducted in time; the connection point between the aluminum wire and the chip generates a large contact resistance, resulting in the accumulation of heat at the connection, increasing the risk of product damage

Traditional FRD modules are mostly half-bridge modules. When used in a full-bridge circuit, the requirements for space and cost of the application equipment are greater; the traditional full-bridge module structure uses complex-shaped electrode connections to form a circuit , during the manufacturing process, the electrode is prone to deformation, causing open circuit, short circuit and inconvenience in operation

Images