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Three-terminal magnetic random access memory and reading and writing method thereof

A technology of random access memory and read-write method, which is applied in the direction of static memory, digital memory information, information storage, etc., can solve the problems of low signal resolution ability and reduce the signal resolution ability of storage units, etc., achieve great application prospects and improve signal resolution ability Effect

Active Publication Date: 2018-03-09
CETHIK GRP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a three-terminal magnetic random access memory and its reading and writing method. Aiming at the problem that the current two-terminal reading and writing electric field or stress-assisted STT-MRAM memory cell signal resolution is low, a method of improving The three-terminal STT-MRAM memory with high signal resolution and its reading and writing method solves the problem that the existing two-terminal reading and writing method reduces the signal resolution of the storage unit

Method used

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  • Three-terminal magnetic random access memory and reading and writing method thereof
  • Three-terminal magnetic random access memory and reading and writing method thereof
  • Three-terminal magnetic random access memory and reading and writing method thereof

Examples

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Embodiment 1

[0023] like Figure 2a As shown, the bottom electrode, auxiliary layer, free layer, barrier layer, pinning layer and top electrode are sequentially deposited on the silicon wafer (substrate) that has been prepared for the front-end process. On the free layer, a third terminal C is drawn out from the side that is in contact with the auxiliary layer. The magnetization direction of the pinned layer is fixed perpendicular to the film plane, and the magnetization direction of the free layer is variable.

[0024] By applying an electric field at the A and B terminals to change the magnetization direction of the free layer, the writing and erasing functions of the memory cell are realized. The resistance value of the memory cell is read by applying an electric field at the A and C terminals.

Embodiment 2

[0026] The order of the individual layers of the STT-MRAM stack can be reversed, as Figure 2b As shown, on the free layer, a third terminal C is led out from the side in contact with the auxiliary layer, and its properties have not changed. By applying an electric field at the A and B terminals to change the magnetization direction of the free layer, the writing and erasing functions of the memory cell are realized. The resistance value of the memory cell is read by applying an electric field at the B and C terminals.

Embodiment 3

[0028] like Figure 3a As shown, the difference from Embodiments 1 and 2 is that the magnetization direction of the pinned layer is fixed by the coupling between the antiferromagnetic coupling layer and the pinned layer. The bottom electrode, the auxiliary layer, the free layer, the barrier layer, the pinning layer, the antiferromagnetic coupling layer, the fixed layer and the top electrode are sequentially deposited on the silicon wafer that has been prepared for the front-end process. The magnetization direction of the pinned layer is fixed perpendicular to the film plane, and the magnetization direction of the free layer is variable. Likewise, on the free layer, a third terminal C is led out from the side that is in contact with the auxiliary layer. By applying an electric field at the A and B terminals to change the magnetization direction of the free layer, the writing and erasing functions of the memory cell are realized. The resistance value of the memory cell is read...

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Abstract

The invention discloses a three-terminal magnetic random access memory and a reading and writing method thereof, which belongs to the technical field of semiconductor memory. On the free layer of a stress and electric field assisted STT-MRAM, a third terminal is led out from one side which contacts an assistant layer. An electric field is applied between bottom and top electrodes, so that a spin transfer torque magnetoresistive random access memory has a write / erase function. Electric field read and memory state resistance is applied between the bottom or top electrode and the third terminal.The three-terminal STT-MRAM provided by the invention does not pass through the assistant layer when reading the MTJ resistance state, which improves the high-low resistance state signal resolving capability of an MTJ memory cell. The three-terminal STT-MRAM has a great application prospect.

Description

technical field [0001] The invention relates to the field of semiconductor memory, in particular to a three-terminal magnetic random access memory and a reading and writing method thereof. Background technique [0002] STT-MRAM memory is based on the change of the resistance state of the memory cell to achieve storage. It has the advantages of fast speed, non-volatility and long life. The basic memory cell includes a top electrode, a memory cell and a bottom electrode. A magnetic tunnel junction (MTJ) memory cell for STT-MRAM includes a free layer, a barrier layer, and a pinning layer. When the magnetization direction of the free layer is parallel / antiparallel to the magnetization direction of the pinned layer, the resistance state of the MTJ is in the low / high state, corresponding to the storage state 0 and 1, respectively. [0003] In order to reduce the power consumption of the entire device and prevent the breakdown of the barrier layer, the current of STT-MRAM during t...

Claims

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Application Information

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IPC IPC(8): H01L43/02H01L43/08H01L43/12G11C11/15
CPCG11C11/15H10N50/80H10N50/10H10N50/01
Inventor 左正笏喻涛陈志刚刘瑞盛刘波
Owner CETHIK GRP
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