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A high-purity nanostructure znga that can be used for deep ultraviolet extremely weak light detection 2 o 4 preparation method

A nanostructure, extremely weak light technology, applied in nanotechnology, chemical instruments and methods, gallium/indium/thallium compounds, etc., can solve the problems of reducing activation energy, shortening reaction cycle, long reaction cycle, etc., and achieve good crystallinity , controllable shape and short reaction cycle

Active Publication Date: 2019-10-18
NANJING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above two ZnGa 2 o 4 The hot solvent method has a long reaction cycle, and the highly active precursor provided by the liquid phase laser ablation method can reduce the activation energy required for the reaction, thereby shortening the reaction cycle.
At present, there is no way to synthesize high-purity and impurity-free nanostructured ZnGa by liquid-phase laser ablation to prepare precursors and solvothermal combination. 2 o 4 , and the ZnGa 2 o 4 Application Report of Assembled into Deep Ultraviolet Extremely Weak Light Detector

Method used

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  • A high-purity nanostructure znga that can be used for deep ultraviolet extremely weak light detection <sub>2</sub> o <sub>4</sub> preparation method
  • A high-purity nanostructure znga that can be used for deep ultraviolet extremely weak light detection <sub>2</sub> o <sub>4</sub> preparation method
  • A high-purity nanostructure znga that can be used for deep ultraviolet extremely weak light detection <sub>2</sub> o <sub>4</sub> preparation method

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preparation example Construction

[0030] A high-purity nanostructure ZnGa that can be used for deep ultraviolet extremely weak light detection of the present invention 2 o 4 The preparation method uses liquid-phase laser ablation and solvothermal method to combine liquid-phase laser ablation of high-purity targets (zinc target and gallium oxide target) immersed in the solution to obtain highly active solvothermal precursors. Nanostructured ZnGa with high purity, single phase structure, good crystallinity, and uniform and controllable morphology was synthesized by solvothermal method under milder conditions. 2 o 4 . By changing the laser ablation time, the amount of deionized water and auxiliary agents (glacial acetic acid, ammonia water), reaction temperature, and reaction time, high-purity nanostructured ZnGa with different sizes and shapes can be obtained. 2 o 4 , including the following steps:

[0031] Step 1. Add deionized aqueous solution to the reaction vessel, place the gallium oxide target in deio...

Embodiment 1

[0042] Using the combination of liquid-phase laser ablation and solvothermal method, the high-purity target (zinc target and gallium oxide target) immersed in the solution is obtained by liquid-phase laser ablation to obtain a highly active solvothermal precursor. High-purity nanostructured ZnGa with single-phase structure, good crystallinity, uniform size and controllable morphology was synthesized under milder conditions 2 o 4 . Specific steps are as follows:

[0043] Step 1. Add 60mL of deionized aqueous solution to the reaction vessel, place the gallium oxide target in deionized water, and use a magnetic stirrer to keep uniformly stirring the solution;

[0044] Step 2. Adjust the optical path of the pulsed laser beam of the Nd:YAG solid-state laser so that the laser beam is focused on the junction of the liquid surface of the deionized water and the gallium oxide target, and ablate the gallium oxide target immersed in the solution for 80 minutes, with a pulse frequency o...

Embodiment 2

[0052] Using the combination of liquid-phase laser ablation and solvothermal method, the high-purity target (zinc target and gallium oxide target) immersed in the solution is obtained by liquid-phase laser ablation to obtain a highly active solvothermal precursor. High-purity nanostructured ZnGa with single-phase structure, good crystallinity, uniform size and controllable morphology was synthesized under milder conditions 2 o 4 . Specific steps are as follows:

[0053] Step 1. Add 60mL of deionized aqueous solution to the reaction vessel, place the gallium oxide target in deionized water, and use a magnetic stirrer to keep uniformly stirring the solution;

[0054] Step 2. Adjust the optical path of the pulsed laser beam of the Nd:YAG solid-state laser so that the laser beam is focused on the junction of the liquid surface in deionized water and the gallium oxide target, and ablate the gallium oxide target immersed in the solution for 90 minutes, with a pulse frequency of 10...

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Abstract

The invention discloses a preparation method of high-purity nano-structure ZnGa2O4 for deep ultraviolet extremely week light detection. The ZnGa2O4 has the band-gap width of 4.4 to 4.7 eV, has excellent thermal and chemical stability and high electronic migration rate, can bear high-current impact and can be applied to a deep ultraviolet photoelectric detector, a light-emitting diode and low-voltage light emission. A high-activity solvent hot precursor is obtained by a liquid phase laser ablation and solvent thermal method combined mode and by performing laser ablation on high-purity zinc target and gallium oxide target in a liquid medium, and the high-purity nano-structure ZnGa2O4 is synthesized by a solvothermal method. compared with the existing preparation method of the ZnGa2O4 nanometer material, the method provided by the invention has the advantages of high-purity product, single-phase structure, high crystallinity, uniform size, controllable shape, simplicity in preparation, mild experimental environment, short reaction time and the like; the prepared ZnGa2O4 nanometer material can be used for being assembled into the deep ultraviolet photoelectric detector and can realizehigh-sensitivity, quick-response and high-pressure-resistant detection on extremely weak light.

Description

technical field [0001] The invention relates to the technical field of preparation of metal oxide semiconductor nanomaterials, in particular to a high-purity nanostructured ZnGa that can be applied to the fields of deep ultraviolet photodetectors, display luminescence, and photocatalysis. 2 o 4 method of preparation. Background technique [0002] In the past few decades, all kinds of optoelectronic devices have been applied in human life. As one of the most important devices, photodetectors are the most important core in the fields of missile calibration, space optical communication and biosensors. Compared with relatively mature visible and infrared photodetectors, research on ultraviolet photodetectors is still in its infancy. As a key technology in the fields of missile tracking, ultraviolet communication, environmental monitoring and biomedical detection, ultraviolet photodetection has been widely valued. It is particularly important for deep ultraviolet photodetector...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00B82Y40/00H01L31/032
Inventor 邹友生刘佳欣曾海波王沙龙刘舒婷
Owner NANJING UNIV OF SCI & TECH
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