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Cadmium telluride hull cell containing high-resistance layer and achieving self-cleaning function

A technology of thin-film cells and high-resistance layers, applied in the field of solar cells, can solve the problems of affecting cell efficiency, reducing conversion efficiency, affecting solar light transmittance, etc., so as to reduce costs, improve conversion rate, and increase visible light transmittance. Effect

Inactive Publication Date: 2018-02-27
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The common structure of cadmium telluride thin-film solar cell is glass / FTO / CdS / CdTe / back contact layer / back electrode layer. This solar cell mainly has the following two disadvantages: 1) The cadmium telluride thin-film solar cell needs to be installed outdoors , as the use time increases, stains will appear on the surface, and the accumulation of stains will seriously affect the transmittance of sunlight, resulting in a continuous decrease in conversion efficiency
However, if the CdS layer is thinned, holes are easy to form on the surface, and the cadmium telluride layer contacts the TCO through these holes, forming a short circuit of the battery, which seriously affects the efficiency of the battery.

Method used

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  • Cadmium telluride hull cell containing high-resistance layer and achieving self-cleaning function
  • Cadmium telluride hull cell containing high-resistance layer and achieving self-cleaning function

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preparation example Construction

[0042] A method for preparing a cadmium telluride thin-film battery containing a high-resistance layer and having a self-cleaning effect described in the present invention comprises the following steps:

[0043] 1) TiO is sequentially deposited on the upper surface of the TCO film (240) 2 Film (210), MgF 2 Thin film (220) and TiO 2 A thin film (230) is obtained to obtain the TCO conductive glass to be processed; a layer of high resistance layer (250) is deposited on the lower surface of the TCO conductive glass to be processed to obtain the modified conductive glass (110).

[0044] 2) Deposit N-type layer (120), light absorbing layer (130), back contact transition layer (140) and back electrode layer (150) in sequence on the lower surface of the modified conductive glass (110) obtained in step 1). , and the back plate glass (170) is bonded to the lower surface of the back electrode layer (150), thereby obtaining a cadmium telluride thin film battery containing a high resista...

Embodiment 1

[0047] A cadmium telluride thin-film battery containing a high-resistance layer with self-cleaning effect, the preparation method of which comprises the following steps:

[0048] 1) TiO is sequentially deposited on the upper surface of the TCO film (240) 2 Film (210), MgF 2 Thin film (220) and TiO 2 Thin film (230), obtains the TCO conductive glass to be processed; Deposit a layer of intrinsic SnO on the lower surface of the TCO conductive glass to be processed 2 (250), promptly obtains modified conductive glass (110); Wherein, TiO 2 The film thickness of thin film (210) is 200-250nm, MgF 2 The film thickness of film (220) is 300-350nm, TiO 2 The film thickness of thin film (230) is 200-250nm, intrinsic SnO 2 The film thickness is 600-650nm.

[0049] 2) CdS film (120), CdTe film (130), ZnTe:Cu (140) and back electrode layer (150) are deposited successively on the lower surface of the modified conductive glass (110) obtained in step 1), and by adding EVA (160) combines t...

Embodiment 2

[0052] A cadmium telluride thin-film battery containing a high-resistance layer with self-cleaning effect, the preparation method of which comprises the following steps:

[0053] 1) TiO is sequentially deposited on the upper surface of the TCO film (240) 2 Film (210), MgF 2 Thin film (220) and TiO 2 Thin film (230), obtains the TCO conductive glass to be processed; Deposit a layer of intrinsic SnO on the lower surface of the TCO conductive glass to be processed 2 (250), promptly obtains modified conductive glass (110); Wherein, TiO 2 The film thickness of thin film (210) is 50-100nm, MgF 2 The film thickness of film (220) is 100-150nm, TiO 2 The film thickness of thin film (230) is 50-100nm, intrinsic SnO 2 The film thickness is 800-850nm.

[0054] 2) CdS film (120), CdTe film (130), ZnTe:Cu (140) and back electrode layer (150) are deposited successively on the lower surface of the modified conductive glass (110) obtained in step 1), and by adding EVA (160) combines the...

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Abstract

The invention discloses a cadmium telluride hull cell containing a high-resistance layer and achieving a self-cleaning function. The cell includes modified conductive glass (110), an electrode area (1) and backplate glass (170); the electrode area (1) is arranged between the conductive glass (110) and the backplate glass (170), and the modified conductive glass (110) includes a TiO2 membrane system (2), a TCO membrane (240) and the high-resistance layer (250) which are stacked in sequence. According to the hull cell, by modifying the upper and lower surfaces of the TCO membrane of the cadmiumtelluride hull cell, the purpose of achieving the self-cleaning function, a high conversion rate and low cost can be achieved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a cadmium telluride thin-film battery containing a high-resistance layer and having a self-cleaning effect. Background technique [0002] The research and application of thin-film solar cells is a hot spot in the field of photovoltaics. Cadmium telluride (CdTe) thin film solar cell is a compound semiconductor thin film solar cell with CdTe as the absorbing layer. The energy gap width of CdTe is most suitable for photoelectric energy conversion. Solar cells made of this semiconductor can convert light into It can be directly converted into electrical energy, and has a high theoretical conversion efficiency (above 30%); at the same time, it has a lower production cost than silicon solar cells. [0003] The common structure of cadmium telluride thin-film solar cell is glass / FTO / CdS / CdTe / back contact layer / back electrode layer. This solar cell mainly has the following two disadvantages: 1...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/073H01L31/18
CPCH01L31/02167H01L31/02168H01L31/073H01L31/1836Y02E10/543Y02P70/50
Inventor 彭寿马立云潘锦功殷新建青汉森
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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