Transient voltage suppressor and manufacturing method therefor

Abstract

The invention discloses a transient voltage suppressor and a manufacturing method therefor. The transient voltage suppressor comprises a first doping type semiconductor substrate, a first doping typefirst epitaxial layer positioned on the surface of the semiconductor substrate, a second doping type buried layer positioned in the epitaxial layer, a first doping type second epitaxial layer positioned on the first epitaxial layer, a second doping type first isolation region and a first doping type second isolation region which extend from the surface of the second epitaxial layer to the buried layer and the second epitaxial layer respectively, and first doping type first doping regions and second doping type second doping regions which are positioned in respective first isolation islands andsecond isolation islands and extend from the surface of the epitaxial surface to the second epitaxial layer respectively, wherein the first isolation region and the second isolation region are used for forming multiple first isolation islands and second isolation islands in the second epitaxial layer respectively; and each first doping region and the corresponding second doping region are electrically connected to form multiple signal channels.

Description

technical field [0001] The present invention relates to the technical field of semiconductor microelectronics, and more specifically, to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] A transient voltage suppressor (Transient Voltage Suppressor, TVS) is a high-efficiency circuit protection device that is commonly used at present. Its shape is the same as that of an ordinary diode, but because of its special structure and process design, it can absorb up to several thousand watts of surge power. The working mechanism of the TVS device is that under reverse application conditions, when subjected to a high-energy large pulse, its working impedance will quickly drop to an extremely low conduction value, thereby allowing a large current to flow while clamping the voltage at a predetermined value. level, the general response time is only 10 -12 seconds, so it can effectively protect the precision components in the electronic circ...

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Problems solved by technology

However, the TVS device obtained by this method requires more than two groups of chips to be packaged in parallel, and two chips need to be placed on one of the substrates, which increases the possibility of packaging defects and increases the cost of packaging.

And because the integrated packaging of multiple chips requires more space and increases the overall size, for smaller packages, multiple groups of chips cannot be packaged at the same time

[0005] In order to realize multi-channel TVS devices, the prior art usually arranges a plurality of traditional single-junction diodes into multi-channels. Although this method has a simple structure and is easy to implement, due to the large capacitance inside the circuit, the Applications of multi-channel TVS devices are limited

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