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Wide spectrum response photoelectric detector and preparation method thereof

A photodetector and wide-spectrum technology, which is applied in the field of wide-spectrum response photodetector and its preparation, can solve the problems of weak light absorption ability and narrow spectral response range, and achieve high responsivity and detectability, and low dark current density , The effect of reducing the leakage current

Active Publication Date: 2018-01-30
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The current photodetectors have problems such as weak light absorption ability and narrow spectral response range.

Method used

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  • Wide spectrum response photoelectric detector and preparation method thereof
  • Wide spectrum response photoelectric detector and preparation method thereof
  • Wide spectrum response photoelectric detector and preparation method thereof

Examples

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Embodiment 1

[0042] See figure 1 , figure 1 This is a flow chart of a preparation method of a broad-spectrum response photodetector provided by an embodiment of the present invention, wherein the preparation method includes:

[0043] (a) Select sapphire substrate;

[0044] (b) Making a bottom electrode on the surface of the sapphire substrate;

[0045] (c) fabricating a light absorption layer on the surface of the bottom electrode;

[0046] (d) Fabricating a top electrode on the surface of the light absorption layer to complete the preparation of the broad-spectrum response photodetector.

[0047] Preferably, step (b) may include:

[0048] (b1) Using a magnetron sputtering process to grow a first metal material on the surface of the sapphire substrate;

[0049] (b2) In an atmosphere of nitrogen and argon, using a rapid thermal annealing process to form an ohmic contact between the sapphire substrate and the first metal material to complete the preparation of the bottom electrode.

[0050] Wherein, in s...

Embodiment 2

[0075] Please refer to Figure 2a-Figure 2f , Figure 2a-Figure 2f It is a schematic diagram of a preparation method of a broad-spectrum response photodetector according to an embodiment of the present invention. The preparation method includes the following steps:

[0076] Step 1. Select the sapphire substrate 201, such as Figure 2a Shown.

[0077] Step 2: Use magnetron sputtering process to sputter Ti material on the surface of sapphire substrate 201; under nitrogen and argon atmosphere, use rapid thermal annealing process to make sapphire substrate 201 and Ti material form ohmic contact to complete The bottom electrode 202 is prepared as Figure 2b Shown.

[0078] Step 3: Using magnetron sputtering process, grow Ga on the surface of bottom electrode 202 2 O 3 , As the first light absorbing layer 203 such as Figure 2c Shown.

[0079] The fourth step is to prepare a spin-coated precursor solution; spin-coat the precursor solution onto the surface of the first light absorbing layer ...

Embodiment 3

[0084] Please refer to image 3 , image 3 This is a schematic structural diagram of a broad-spectrum response photodetector provided by an embodiment of the present invention. The photodetector uses the above as Figure 2a-Figure 2f The preparation method shown is made. Specifically, the photodetector includes: a sapphire substrate 301, a bottom electrode 302, and Ga 2 O 3 Light absorption layer 303, hybrid perovskite light absorption layer 304, β-Ga 2 O 3 The light absorbing layer 305 and the top electrode 306.

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Abstract

The invention relates to a wide spectrum response photoelectric detector and a preparation method thereof. The preparation method comprises the steps that (a) a sapphire substrate is selected; (b) a bottom electrode is manufactured on the surface of the sapphire substrate; (c) a light absorption layer is manufactured on the surface of the bottom electrode; and (d) a top electrode is manufactured on the surface of the light absorption layer so as to complete preparation of the wide spectrum response photoelectric detector. According to the wide spectrum response photoelectric detector, the double-heterojunction structure is adopted so that double potential barriers can be formed, the leakage current can be effectively reduced and the device reliability of the photoelectric detector can be greatly enhanced.

Description

Technical field [0001] The invention relates to the field of semiconductor device design and manufacturing, in particular to a broad-spectrum response photoelectric detector and a preparation method thereof. Background technique [0002] At present, most photodetectors are photodetection diodes based on PN junctions, which can generally measure the range of ultraviolet to infrared light. They have great use value in the development of military high-tech and civilian products, such as exhaust smoke or smoke detection in solar blind areas. Flying targets in plume that can emit a large amount of ultraviolet radiation can be detected or effectively tracked in real time. In the infrared region, near-infrared detection plays an important role in resource investigation, environmental monitoring, medical diagnosis, night vision imaging and other fields. [0003] Based on CH 3 NH 3 PbI 3 The perovskite material is widely used in photodetectors. This material has a high response from visible...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549Y02P70/50
Inventor 贾仁需庞体强栾苏珍张玉明汪钰成刘银涛
Owner XIDIAN UNIV
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