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A Method for Electrochemical Repair of Hydrogen-terminated Diamond Surfaces for Ion Sensors

A technology of ion sensor and repair method, which is applied in the field of semiconductor electrochemical applications, can solve problems such as surface resistance increase, damage, and sensor sensitivity reduction, and achieve the effect of consistent processing methods and widening applications and processing

Active Publication Date: 2019-11-12
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the current common boron-doped diamond ISFETs, hydrogen-terminated diamond shows the characteristics of simple process and better negative electron affinity. However, under long-term or different solution environments, the hydrogen-terminated diamond surface will be damaged to a certain extent, thus Increase the surface resistance and reduce the sensitivity of the sensor

Method used

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  • A Method for Electrochemical Repair of Hydrogen-terminated Diamond Surfaces for Ion Sensors
  • A Method for Electrochemical Repair of Hydrogen-terminated Diamond Surfaces for Ion Sensors
  • A Method for Electrochemical Repair of Hydrogen-terminated Diamond Surfaces for Ion Sensors

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Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0041] (1) Weigh 4.9g of sulfuric acid and 1L of deionized water to prepare 0.05M H 2 SO 4 solution to ensure that the solution pH ≈ 1; (2) connect the double wires of the diamond electrode structure treated by the damage reaction after ultrasonic cleaning with deionized water for 5-15mins to the working electrode of the electrolytic cell, and use a Pt electrode as the counter electrode; (3) connect the The prepared solution was poured into the electrolytic cell, and the negative potential linear scanning mode was turned on, and the voltage was scanned once from 0 to -3V; (4) After the scanning was completed, it was left to stand for 5 minutes to wait for the solution to be uniform, and the potential of the reference electrode returned to the initial potential and Once stable, scan from 0 to -3V again; (5) After scanning three times in this method, place the diamond electrode in deionized water for ultrasonic cleaning for 5-15mins, and take out the diamond. Ventilate and dry ...

specific Embodiment approach 2

[0043] (1) Weigh 0.49g sulfuric acid and 1L deionized water to prepare 0.005M H 2 SO 4 solution to ensure that the solution pH ≈ 2; (2) connect the double wires of the diamond electrode structure treated by the damage reaction after ultrasonic cleaning with deionized water for 5-15mins to the working electrode of the electrolytic cell, and use a Pt electrode as the counter electrode; (3) connect the The prepared solution was poured into the electrolytic cell, and the negative potential linear scanning mode was turned on, and the voltage was scanned once from 0 to -3V; (4) After the scanning was completed, it was left to stand for 5 minutes to wait for the solution to be uniform, and the potential of the reference electrode returned to the initial potential and Once stable, scan from 0 to -3V again; (5) After scanning three times in this method, place the diamond electrode in deionized water for ultrasonic cleaning for 5-15mins, and take out the diamond. Ventilate and dry at 8...

specific Embodiment approach 3

[0045] (1) Weigh 3.65g of hydrochloric acid and 1L of deionized water to prepare 0.1M HCl solution to ensure that the solution PH≈1; (2) Use deionized water to ultrasonically clean the damaged reaction-treated double wire with diamond electrode structure for 5-15mins Both are connected to the working electrode of the electrolytic cell, and the counter electrode is a Pt electrode; (3) pour the prepared solution into the electrolytic cell, and turn on the negative potential linear scanning mode for it, and scan the voltage once from 0 to -3V; (4) scan After the completion, let it stand for 5mins to wait for the solution to be uniform, the potential of the reference electrode returns to the initial potential and reaches stability, and then scans from 0 to -3V again; (5) After scanning three times in this method, place the diamond electrode in deionized water for ultrasonic cleaning 5-15mins, and take out the diamond, its surface moisture is ventilated and dried in a ventilated dry...

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Abstract

The invention discloses a hydrogen terminal diamond surface electrochemical repairing method for an ion sensor and belongs to the field of preparation of matrix materials for semiconductor foundationcircuits. The hydrogen terminal diamond surface electrochemical repairing method for the ion sensor specifically includes the steps that a, by means of hydrogen gas plasma treatment, a surface p typeconductive channel is made to be formed on diamond, and the diamond is made to achieve semiconductor transformation; b, a vacuum evaporation method is adopted to prepare an electrode with a special pattern on the surface of the diamond after photoetching development of the diamond, and the hydrogen terminal diamond is made to achieve electric conduction; c, a wire is connected with a gold electrode through a fusion welding method or silver paste; d, the electrode and the wire are covered with a silica gel protecting layer, and it is avoided that metal is damaged in a highly corrosive acidic and alkaline solution; e, the diamond wire is connected between a work electrode and counter electrodes, and an actual environment is simulated in different ion solutions for testing; and f, the testeddiamond serves as the work electrode to be placed in a strong inorganic acid solution, and 0- -3V negative potential linear scanning is performed on the tested diamond. Finally, the diamond surface hydrogen terminal repairing with the resistance rising because of surface terminal damage is achieved, and the surface resistance is made to lower.

Description

Technical field: [0001] The patent of the present invention relates to the application field of semiconductor electrochemistry; especially, ion-sensitive field effect transistors and pH sensors can be formed after hydrogen terminal treatment on the surface of single crystal or polycrystalline diamond, and the surface hydrogen terminal will be damaged to a certain extent in extreme solution environments. Surface hydrogen terminal repair is achieved through an electrochemical method to reduce surface resistance. [0002] technical background [0003] Electrochemistry is the study and application of chemical processes involving electron transfer at the interface of solid electrodes and solutions. Advances in the preparation of diamond by chemical vapor deposition (CVD) have further improved the quality of single crystal and polycrystalline diamond, which can meet the requirements in the fields of electronics and electrochemistry. Diamond has excellent physical and chemical prop...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/30C23C14/18C23C14/04C23C14/02C25D11/00G01N27/333
Inventor 李成明郑宇亭刘金龙赵云郭彦召魏俊俊黑立富陈良贤
Owner UNIV OF SCI & TECH BEIJING
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