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Preparation method of tungsten selenide thin film

A technology of tungsten selenide and thin film, which is applied in the direction of electrolytic inorganic material coating, etc., can solve the problems that the uniformity of thin film products is difficult to control, and the shape of prepared products is difficult to control, so as to achieve strong controllability of film shape and thickness, and realize thin film Shape and thickness, and the effect of reducing production costs

Active Publication Date: 2018-01-12
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of method has the advantages of controllable chemical composition of the film, but has disadvantages such as difficult to control the morphology of the prepared product, and difficult to control the uniformity of the film product on a large area.
Therefore, existing methods (whether physical or chemical) have limiting factors, and it is urgent to develop a reliable, controllable chemical composition, controllable product shape, controllable film uniformity, and large-scale application. Method to Prepare Tungsten Selenide Thin Films

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  • Preparation method of tungsten selenide thin film
  • Preparation method of tungsten selenide thin film
  • Preparation method of tungsten selenide thin film

Examples

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Embodiment 1

[0025] A preparation method of the tungsten selenide thin film of the present invention specifically comprises the following steps:

[0026] (1) Clean the fluorine-doped tin dioxide conductive glass (FTO, used as the cathode sheet) three times with detergent, soak it in isopropanol ultrasonically for 15 minutes, then soak it in ethanol ultrasonically for 15 minutes, rinse it three times with deionized water, and then Drying with nitrogen gas to obtain fluorine-doped tin dioxide conductive glass with a clean surface;

[0027] (2) Configure a mixed solution containing 1mol / L sodium chloride, 2mmol / L selenous acid, 1mmol / L sodium tungstate solution, 0.5mol / L citric acid and 0.5mol / L disodium edetate, and use The pH of the mixed solution was adjusted to be 1 with hydrochloric acid, and then the mixed solution was deoxygenated by nitrogen bubbling for 15 minutes;

[0028] (3) With the mixed solution obtained in step (2) as the electrochemical deposition solution, with the clean fl...

Embodiment 2

[0032] A preparation method of the tungsten selenide thin film of the present invention specifically comprises the following steps:

[0033] (1) Clean the fluorine-doped tin dioxide conductive glass (FTO, used as the cathode sheet) three times with detergent, soak it in isopropanol ultrasonically for 15 minutes, then soak it in ethanol ultrasonically for 15 minutes, rinse it three times with deionized water, and then Drying with nitrogen gas to obtain fluorine-doped tin dioxide conductive glass with a clean surface;

[0034] (2) Configure a mixed solution containing 1mol / L sodium chloride, 2mmol / L selenous acid, 1mmol / L sodium tungstate solution, 0.5mol / L citric acid and 0.5mol / L disodium edetate, and use The pH of the mixed solution was adjusted to be 1 with hydrochloric acid, and then the mixed solution was deoxygenated by nitrogen bubbling for 15 minutes;

[0035] (3) With the mixed solution obtained in step (2) as the electrochemical deposition solution, with the clean fl...

Embodiment 3

[0039] A preparation method of the tungsten selenide thin film of the present invention specifically comprises the following steps:

[0040] (1) Clean the fluorine-doped tin dioxide conductive glass (FTO, used as the cathode sheet) three times with detergent, soak it in isopropanol ultrasonically for 15 minutes, then soak it in ethanol ultrasonically for 15 minutes, rinse it three times with deionized water, and then Drying with nitrogen gas to obtain fluorine-doped tin dioxide conductive glass with a clean surface;

[0041](2) Configure a mixed solution containing 1mol / L sodium chloride, 2mmol / L selenous acid, 1mmol / L sodium tungstate solution, 0.5mol / L citric acid and 0.5mol / L disodium edetate, and use The pH of the mixed solution was adjusted to be 1 with hydrochloric acid, and then the mixed solution was deoxygenated by nitrogen bubbling for 15 minutes;

[0042] (3) With the mixed solution obtained in step (2) as the electrochemical deposition solution, with the clean flu...

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Abstract

The invention discloses a preparation method of a tungsten selenide thin film. The preparation method of the tungsten selenide thin film includes the following steps that S1, the surface of a cathodesheet is washed clean and is dried; S2, an acidic solution containing selenium and tungsten is prepared, and is deoxidized; S3, the acidic solution containing selenium and tungsten obtained in the second step serves as an electrochemical deposition solution, and with the cathode sheet obtained in the step S1 as an electrode, saturated calomel as a reference electrode and a platinum sheet as a workelectrode, electrochemical deposition is performed, and deposition is performed on the cathode sheet to form the tungsten selenide thin film, wherein deposition voltage is 0.3 V to 0.7 V, depositiontemperature is 25 DEG C to 80 DEG C, and deposition time is 1 min to 20 min; and S4, after electrochemical deposition ends, the tungsten selenide thin film is taken out, and is cleaned and dried, andthe tungsten selenide thin film is obtained. The product obtained through the method is the tungsten selenide thin film controllable in shape and thickness, concentrated in particle shape, uniform indistribution and compact in arrangement.

Description

technical field [0001] The invention relates to the technical field of preparation of tungsten selenide thin films, in particular to a preparation method of tungsten selenide thin films. Background technique [0002] Tungsten Selenide (WSe 2 ) as a typical representative of transition metal chalcogenides, which has a layered structure similar to graphene, exhibits unique and strong anisotropy in electrical, chemical, mechanical and thermal properties, which is used in superconducting and electrical materials , solid lubricants and other fields have broad application prospects. At the same time, as a typical semiconductor material, tungsten selenide material has a smaller bandgap width than other transition metal chalcogenides, and is more widely used in the fields of optoelectronics, catalysis, and electronic sensing. [0003] At present, there are many production methods of tungsten selenide thin film, mainly including physical method and chemical method. Among them, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/08
Inventor 李栋徐润泽郭学益田庆华
Owner CENT SOUTH UNIV
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