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Method for reducing photoelectrochemistry water decomposition starting potential of Ni/n-Si photo-anode

A technology of photoelectrochemistry and photoanode, which is applied in the field of photoelectrochemistry, can solve disadvantages and other problems, achieve the effect of reducing operation, low cost, and releasing the pinning effect of Fermi level

Active Publication Date: 2017-12-26
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is very unfavorable for photoelectrochemical water splitting using solar energy

Method used

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  • Method for reducing photoelectrochemistry water decomposition starting potential of Ni/n-Si photo-anode
  • Method for reducing photoelectrochemistry water decomposition starting potential of Ni/n-Si photo-anode
  • Method for reducing photoelectrochemistry water decomposition starting potential of Ni/n-Si photo-anode

Examples

Experimental program
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Effect test

Embodiment 1

[0025] The p-doped n-type single crystal Si sheet with a resistivity of 0.8-1Ω·cm was first soaked in H 2 SO 4 :H 2 o 2 Wash in a solution with a volume ratio of 3:1 for 10 minutes, then wash in H 2 O:HCl:H 2 o 2 Soak in a solution with a volume ratio of 5:1:1 at 75°C for 10 minutes for cleaning. Soak the cleaned sample in 4% dilute HF solution for 10 seconds to remove the surface oxide layer. Put the silicon wafer with the surface oxide layer removed immediately into the electron beam evaporation chamber, keep the chamber temperature at 50°C and the vacuum degree at 2×10 -4 Pa. by A deposition rate of about 20nm Ni thin film was deposited by electron beam evaporation on a silicon wafer to obtain a Ni / n-Si photoanode.

Embodiment 2

[0027] The Ni / n-Si photoanode prepared in Example 1 is put into a rapid heat treatment furnace, and the high-purity N 2 Under the atmosphere, rapid heat treatment is carried out at 450°C for 30 seconds, and the heating rate is 30°C / s. The heat treatment time of 30 seconds does not include the time spent in the heating process. A Ni / n-Si photoanode after rapid heat treatment was obtained.

[0028] By comparing the XRD patterns and cross-sectional TEM images of Ni / n-Si photoanode before and after heat treatment, we can observe the phase and structure changes of Ni / n-Si photoanode before and after heat treatment. figure 1 It is the XRD pattern of Ni / n-Si before and after heat treatment. By comparison, we can find that the diffraction peak of Ni after heat treatment becomes sharper, and the half-peak width becomes narrower, indicating that the crystallinity of Ni after heat treatment is improved.

[0029] figure 2 (a) and (b) are the cross-sectional TEM images of the Ni / n-Si p...

Embodiment 3

[0032] The Ni / n-Si photoanode prepared in Example 1 is put into a rapid heat treatment furnace, and the high-purity N 2 Under atmosphere, rapid heat treatment is carried out at 550° C. for 30 seconds, and the heating rate is 30° C. / s. The heat treatment time of 30 seconds does not include the time spent in the heating process. A Ni / n-Si photoanode after rapid heat treatment was obtained.

[0033] The C-V curves of Ni / n-Si photoanode before and after heat treatment are as follows Figure 4 As shown, we can find that the on-potential of the Ni / n-Si photoanode shifted negatively by 100mV after heat treatment.

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Abstract

The invention discloses a method for reducing the photoelectrochemistry water decomposition starting potential of a Ni / n-Si photo-anode. A simple rapid heat treatment process is conducted on the prepared Ni / n-Si photo-anode, the interface states existing between Ni / n-Si interfaces are reduced, the Fermi level pinning effect caused by the interface states is released, the schottky barrier height formed by Ni / n-Si is increased, accordingly the Ni / n-Si photo-anode generates the higher photovoltage during illumination, and finally the photoelectrochemistry water decomposition starting potential of the Ni / n-Si photo-anode is reduced. The method for reducing the photoelectrochemistry water decomposition starting potential of the Ni / n-Si photo-anode is easy to operate, low in cost and suitable for being applied to a metal / n-Si photo-anode system on a large scale, and positive significance is achieved for promoting development and application of the photoelectrochemistry water decomposition technology.

Description

technical field [0001] The invention relates to the field of photoelectrochemical technology, in particular to a method for reducing the on-potential of Ni / n-Si photoanodic photoelectrochemical water splitting. Background technique [0002] Photoelectrochemical water splitting can realize the green conversion of solar energy to hydrogen energy, which is considered to be an effective means to solve the current increasingly severe energy crisis and environmental pollution problems. The complete electrochemical reaction of photoelectrochemical water splitting includes two half-reactions of hydrogen production and oxygen production. The hydrogen production reaction occurs at the photocathode, and the oxygen production reaction occurs at the photoanode. Among them, the oxygen generation reaction is more difficult to realize because four electrons are required to participate in the reaction at the same time. Therefore, the development of high-performance photoanode materials is t...

Claims

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Application Information

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IPC IPC(8): C25B11/06C25B1/04
CPCC25B1/04C25B1/55C25B11/051C25B11/059C25B11/075Y02E60/36Y02P20/133
Inventor 佘广为李生阳师文生
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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