Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Perovskite thin film solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of low electron transmission performance, affect the photocurrent output of the device, and affect the overall efficiency of the device, and achieve the effect of reducing costs.

Active Publication Date: 2020-11-27
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

but since C 60 Electron transport performance is lower than that of PC 61 BM, using C 60 As an electron transport layer, it will affect the photocurrent output of the device, and then affect the overall efficiency of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite thin film solar cell and preparation method thereof
  • Perovskite thin film solar cell and preparation method thereof
  • Perovskite thin film solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] see below figure 1 The preparation method of the perovskite thin film solar cell described above is described in detail, and the method comprises steps:

[0039] S1 , providing a substrate 10 and preparing and forming a first electrode 20 on the substrate 10 .

[0040] S2 , preparing and forming a hole transport layer 70 on the first electrode 20 . Specifically, the hole transport layer 70 can be prepared by a spin coating method. For example, the solution of the material used to prepare the hole transport layer 70 is spin-coated to form a film, and then annealed on a hot plate to form the hole transport layer 70 . Commonly used, the aqueous solution of PEDOT:PSS is spin-coated and then fired at a temperature of 80-140°C for 10-30 minutes.

[0041] S3 , preparing and forming an interface modification layer 80 on the hole transport layer 70 . Specifically, the interface modification layer 80 can be prepared by a spin coating method. For example, the solution of the ...

Embodiment 1

[0050] This example selects a single specific material, does not limit the selection of other materials, but only exemplifies the invention.

[0051] (1) Clean the glass substrate 10 with the ITO electrode (the first electrode 20 ) with acetone, ethanol, and isopropanol in sequence for 30 minutes, then dry the substrate with nitrogen gas, and then treat it with ultraviolet light for 30 minutes.

[0052] (2) Spin-coat PEDOT:PSS (4083), the material of the hole transport layer, on the dried glass substrate 10 after ultraviolet treatment, at a rotation speed of 3500 rpm, and rotate for 60 seconds to obtain a layer of uniform PEDOT:PSS film. Subsequently, the PEDOT:PSS thin film was fired in air at 125° C. for 10 minutes, and then cooled to room temperature to form the hole transport layer 70 .

[0053] (3), use 2wt% PSSNa polymer aqueous solution, spin-coat on the hole transport layer 70, the rotation speed is 2000 rpm, the time is 60 seconds, put it in the glove box after 5 minu...

Embodiment 2

[0059] The thickness control of the second electron transport layer 60 in the step (5) in embodiment 1 is 90nm, the thickness control of the first electron transport layer 40 in the step (6) is 90nm, and other conditions are the same preparation as in embodiment 1 Perovskite thin film solar cells.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a perovskite thin-film solar cell, comprising: a first electrode; a perovskite light-absorbing layer arranged on the first electrode; a first electron transport layer arranged on the perovskite light-absorbing layer ; The second electrode is disposed on the first electron transport layer; wherein, the material of the first electron transport layer is C doped with an organic small molecule dopant 60 . The preparation method of the solar cell as described above includes: applying a dual-source vacuum thermal deposition process, adding the organic small molecule dopant and C 60 The first electron transport layer is formed on the perovskite light absorbing layer by evaporation redeposition. In the present invention, C doped with organic small molecule dopant is used 60 As an electron transport layer, it can not only meet the photocurrent output requirements of the device, but also greatly reduce the cost of the device, which is conducive to the industrial application of perovskite thin film solar cells.

Description

technical field [0001] The invention relates to the technical field of photoelectric functional materials and devices, in particular to a perovskite thin-film solar cell and a preparation method thereof. Background technique [0002] Organic-inorganic hybrid perovskite solar electronics have attracted widespread attention because of their solution processing, low energy consumption in the preparation process and high device efficiency. Especially in terms of device efficiency, the device efficiency of single-junction perovskite solar cells has exceeded 20% so far. With the improvement of device efficiency, the structure of the device is also gradually evolving, from the mesoporous structure similar to the structure of the dye-sensitized cell, to the planar heterojunction structure and the trans-planar heterojunction structure with a dense electron transport layer. [0003] Among them, the trans planar heterojunction structure battery includes a transparent bottom electrode,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/164H10K85/211H10K30/10Y02E10/549
Inventor 李雪原张连萍马昌期
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com