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Solar cell crystal silicon wafer phosphorus diffusion method

A technology for solar cells and crystalline silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of uneven atmosphere environment and temperature field along the radial direction, affecting the controllability of process parameters, solar cell electrical performance, portable Insufficient mixing of the source gas ratio, diffusion atmosphere, etc., to achieve the effects of reducing the surface minority carrier recombination rate, improving photoelectric conversion efficiency, and improving diffusion uniformity

Inactive Publication Date: 2017-11-07
HEFEI DAZHUO ELECTRIC POWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the proportion of the source-carrying gas is too small, the mixing of the diffusion atmosphere will be insufficient and uneven, resulting in poor uniformity of sheet resistance and poor process controllability
[0004] In addition, for the tubular diffusion furnaces currently widely used in production, the main factors affecting the inhomogeneity between the plates are: unbalanced temperature distribution in the axial direction, mismatching of gas in and out, and serious heat dissipation at the furnace mouth; affecting the inhomogeneity in the plate The main reason is that there are differences in the atmosphere environment and temperature field along the radial direction
Therefore, in the case of insufficient and uneven mixing of the diffusion atmosphere, if only relying on the method of temperature compensation in different temperature zones, it is obviously far from being able to achieve an ideal uniform diffusion state, which will eventually affect the controllability of subsequent process parameters and the performance of solar cells. electrical properties

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A solar cell crystalline silicon wafer phosphorus diffusion method is carried out according to the following steps:

[0030] (1) Place the single crystal silicon wafer to be treated in a diffusion furnace, first raise the temperature to 380°C at a heating rate of 10°C / min, keep it for 15 minutes, then raise the temperature to 740°C at a heating rate of 15°C / min, and pass Introduce phosphorus-carrying source nitrogen, dry oxygen and large nitrogen for constant source diffusion, wherein the flow rate of the phosphorus-carrying source nitrogen is 0.8L / min, the flow rate of dry oxygen is 0.8L / min, and the flow rate of large nitrogen is 10L / min , the diffusion time is 12min, and the pressure in the furnace is controlled to be 80MPa;

[0031] (2) Stop feeding the phosphorus-carrying source nitrogen, raise the temperature to 880°C at a heating rate of 4°C / min, and feed in dry oxygen and nitrogen at the same time. The flow rate of dry oxygen is 1.0L / min, and the flow rate of ni...

Embodiment 2

[0040] A solar cell crystalline silicon wafer phosphorus diffusion method is carried out according to the following steps:

[0041](1) Place the polysilicon wafer to be treated in a diffusion furnace, first raise the temperature to 400°C at a heating rate of 15°C / min, keep it for 20 minutes, then raise the temperature to 760°C at a heating rate of 20°C / min, and pass it into the Constant source diffusion of phosphorus source nitrogen, dry oxygen and large nitrogen, wherein, the flow rate of the phosphorus source nitrogen gas is 1.2L / min, the flow rate of dry oxygen is 1.2L / min, and the flow rate of large nitrogen is 12L / min. The time is 14min, and the pressure in the furnace is controlled to be 100MPa;

[0042] (2) Stop feeding the phosphorus-carrying source nitrogen, raise the temperature to 900°C at a heating rate of 6°C / min, and simultaneously feed dry oxygen and large nitrogen to advance, the flow rate of dry oxygen is 1.5L / min, and the flow rate of large nitrogen is 15L / m...

Embodiment 3

[0051] A solar cell crystalline silicon wafer phosphorus diffusion method is carried out according to the following steps:

[0052] (1) Place the single crystal silicon wafer to be treated in a diffusion furnace, first raise the temperature to 420°C at a heating rate of 20°C / min, keep it for 25min, then raise the temperature to 780°C at a heating rate of 25°C / min, and pass Introduce phosphorus-carrying source nitrogen, dry oxygen and large nitrogen for constant source diffusion, wherein the flow rate of the phosphorus-carrying source nitrogen is 1.6L / min, the flow rate of dry oxygen is 1.6L / min, and the flow rate of large nitrogen is 14L / min , the diffusion time is 16min, and the pressure in the furnace is controlled to be 120MPa;

[0053] (2) Stop feeding the phosphorus-carrying source nitrogen, raise the temperature to 920°C at a heating rate of 8°C / min, and feed in dry oxygen and nitrogen at the same time. The flow rate of dry oxygen is 2.0L / min, and the flow rate of nitrog...

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Abstract

The invention discloses a solar cell crystal silicon wafer phosphorus diffusion method. The method comprises the following steps: 1) a to-be-processed crystal silicon wafer is placed in a diffusion furnace, temperature is raised, and nitrogen carrying a phosphorus source, dry oxygen and large nitrogen are introduced, constant-source diffusion is carried out; 2) introduction of the nitrogen carrying the phosphorus source is stopped, temperature is raised, the dry oxygen and the large nitrogen are introduced to perform propelling; 3) the nitrogen carrying the phosphorus source and the dry oxygen are introduced, and low-temperature diffusion is carried out; 4) the introduction of the nitrogen carrying the phosphorus source is stopped, and constant-temperature propelling is carried out; 5) temperature is raised, the nitrogen carrying the phosphorus source and the dry oxygen are introduced, and constant-source diffusion is carried out; 6) the introduction of the nitrogen carrying the phosphorus source is stopped, and oxygen-existing limited-source diffusion is performed; 7) temperature is lowered, the nitrogen carrying the phosphorus source, the dry oxygen and the large nitrogen are introduced, and cooling diffusion is carried out; and 8) temperature is lowered, and the crystal silicon wafer is taken out from a boat. The phosphorus diffusion method is simple and is easy to do, and the phosphorus diffusion method is widely used; and photoelectric conversion efficiency of the silicon wafer can be effectively improved through adoption of the method, electric performance of a solar cell is improved, and the phosphorus diffusion method is suitable for promotion and application.

Description

technical field [0001] The invention relates to the field of solar cell diffusion and junction fabrication technology, in particular to a phosphorous diffusion method for solar cell crystalline silicon wafers. Background technique [0002] A solar cell is a device that directly converts light energy into electrical energy. Because it is clean, non-polluting, inexhaustible and inexhaustible, it has gradually become an important power generation method. The principle is to use the photovoltaic effect of the PN junction to convert light energy into electrical energy. At present, silicon solar cells are widely used, and its manufacturing process has also been standardized. The main steps are: chemical cleaning and surface structuring (texturing)—diffusion junction—etching cleaning—deposition of anti-reflection film—printing electrodes—sintering. Among them, the step of diffusion junction (usually phosphorus diffusion junction) is a key step, and the junction process has a cruci...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/223
CPCH01L21/223H01L31/1804Y02E10/547Y02P70/50
Inventor 杨自芬
Owner HEFEI DAZHUO ELECTRIC POWER CO LTD
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