Solar cell crystal silicon wafer phosphorus diffusion method
A technology for solar cells and crystalline silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of uneven atmosphere environment and temperature field along the radial direction, affecting the controllability of process parameters, solar cell electrical performance, portable Insufficient mixing of the source gas ratio, diffusion atmosphere, etc., to achieve the effects of reducing the surface minority carrier recombination rate, improving photoelectric conversion efficiency, and improving diffusion uniformity
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Embodiment 1
[0029] A solar cell crystalline silicon wafer phosphorus diffusion method is carried out according to the following steps:
[0030] (1) Place the single crystal silicon wafer to be treated in a diffusion furnace, first raise the temperature to 380°C at a heating rate of 10°C / min, keep it for 15 minutes, then raise the temperature to 740°C at a heating rate of 15°C / min, and pass Introduce phosphorus-carrying source nitrogen, dry oxygen and large nitrogen for constant source diffusion, wherein the flow rate of the phosphorus-carrying source nitrogen is 0.8L / min, the flow rate of dry oxygen is 0.8L / min, and the flow rate of large nitrogen is 10L / min , the diffusion time is 12min, and the pressure in the furnace is controlled to be 80MPa;
[0031] (2) Stop feeding the phosphorus-carrying source nitrogen, raise the temperature to 880°C at a heating rate of 4°C / min, and feed in dry oxygen and nitrogen at the same time. The flow rate of dry oxygen is 1.0L / min, and the flow rate of ni...
Embodiment 2
[0040] A solar cell crystalline silicon wafer phosphorus diffusion method is carried out according to the following steps:
[0041](1) Place the polysilicon wafer to be treated in a diffusion furnace, first raise the temperature to 400°C at a heating rate of 15°C / min, keep it for 20 minutes, then raise the temperature to 760°C at a heating rate of 20°C / min, and pass it into the Constant source diffusion of phosphorus source nitrogen, dry oxygen and large nitrogen, wherein, the flow rate of the phosphorus source nitrogen gas is 1.2L / min, the flow rate of dry oxygen is 1.2L / min, and the flow rate of large nitrogen is 12L / min. The time is 14min, and the pressure in the furnace is controlled to be 100MPa;
[0042] (2) Stop feeding the phosphorus-carrying source nitrogen, raise the temperature to 900°C at a heating rate of 6°C / min, and simultaneously feed dry oxygen and large nitrogen to advance, the flow rate of dry oxygen is 1.5L / min, and the flow rate of large nitrogen is 15L / m...
Embodiment 3
[0051] A solar cell crystalline silicon wafer phosphorus diffusion method is carried out according to the following steps:
[0052] (1) Place the single crystal silicon wafer to be treated in a diffusion furnace, first raise the temperature to 420°C at a heating rate of 20°C / min, keep it for 25min, then raise the temperature to 780°C at a heating rate of 25°C / min, and pass Introduce phosphorus-carrying source nitrogen, dry oxygen and large nitrogen for constant source diffusion, wherein the flow rate of the phosphorus-carrying source nitrogen is 1.6L / min, the flow rate of dry oxygen is 1.6L / min, and the flow rate of large nitrogen is 14L / min , the diffusion time is 16min, and the pressure in the furnace is controlled to be 120MPa;
[0053] (2) Stop feeding the phosphorus-carrying source nitrogen, raise the temperature to 920°C at a heating rate of 8°C / min, and feed in dry oxygen and nitrogen at the same time. The flow rate of dry oxygen is 2.0L / min, and the flow rate of nitrog...
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